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Esteve Amat
Esteve Amat
Institute of Microelectronics of Barcelona
Verifierad e-postadress på imb-cnm.csic.es - Startsida
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Microwave filters with improved stopband based on sub-wavelength resonators
J Garcia-Garcia, F Martín, F Falcone, J Bonache, JD Baena, I Gil, E Amat, ...
IEEE Transactions on Microwave theory and techniques 53 (6), 1997-2006, 2005
2522005
Reliability challenges in design of memristive memories
P Pouyan, E Amat, A Rubio
2014 5th European Workshop on CMOS Variability (VARI), 1-6, 2014
602014
Channel Hot-Carrier Degradation in Short-Channel Transistors With High- /Metal Gate Stacks
E Amat, T Kauerauf, R Degraeve, A De Keersgieter, R Rodriguez, ...
IEEE Transactions on Device and Materials reliability 9 (3), 425-430, 2009
562009
Competing degradation mechanisms in short-channel transistors under channel hot-carrier stress at elevated temperatures
E Amat, T Kauerauf, R Degraeve, R Rodriguez, M Nafria, X Aymerich, ...
IEEE Transactions on Device and Materials Reliability 9 (3), 454-458, 2009
512009
Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack
E Amat, T Kauerauf, R Degraeve, R Rodríguez, M Nafría, X Aymerich, ...
Microelectronic Engineering 87 (1), 47-50, 2010
452010
UTBB FDSOI technology flexibility for ultra low power internet-of-things applications
E Beigné, JF Christmann, A Valentian, O Billoint, E Amat, D Morche
2015 45th European Solid State Device Research Conference (ESSDERC), 164-167, 2015
362015
Memristive crossbar memory lifetime evaluation and reconfiguration strategies
E Amat, A Rubio
IEEE Transactions on Emerging Topics in Computing 6 (2), 207-218, 2016
332016
Channel-hot-carrier degradation and bias temperature instabilities in CMOS inverters
J Martin-Martinez, S Gerardin, E Amat, R Rodriguez, M Nafria, X Aymerich, ...
IEEE transactions on electron devices 56 (9), 2155-2159, 2009
292009
Exploring the influence of variability on single-electron transistors into SET-based circuits
E Amat, J Bausells, F Perez-Murano
IEEE Transactions on Electron Devices 64 (12), 5172-5180, 2017
252017
A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics
E Amat, T Kauerauf, R Rodríguez, M Nafría, X Aymerich, R Degraeve, ...
Microelectronic engineering 103, 144-149, 2013
252013
Understanding and optimization of hot-carrier reliability in germanium-on-silicon pMOSFETs
D Maji, F Crupi, E Amat, E Simoen, B De Jaeger, DP Brunco, CR Manoj, ...
IEEE transactions on electron devices 56 (5), 1063-1069, 2009
252009
RRAM variability and its mitigation schemes
P Pouyan, E Amat, S Hamdioui, A Rubio
2016 26th international workshop on power and timing modeling, optimization …, 2016
242016
Process variability-aware proactive reconfiguration technique for mitigating aging effects in nano scale SRAM lifetime
P Pouyan, E Amat, A Rubio
2012 IEEE 30th VLSI Test Symposium (VTS), 240-245, 2012
242012
Gate Voltage Influence on the Channel Hot-Carrier Degradation of High- -Based Devices
E Amat, T Kauerauf, R Degraeve, R Rodríguez, M Nafría, X Aymerich, ...
IEEE Transactions on Device and Materials Reliability 11 (1), 92-97, 2010
212010
Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions
E Amat, R Rodríguez, M Nafría, X Aymerich, JH Stathis
Microelectronics Reliability 47 (4-5), 544-547, 2007
202007
Statistical lifetime analysis of memristive crossbar matrix
P Pouyan, E Amat, A Rubio
2015 10th International Conference on Design & Technology of Integrated …, 2015
192015
Feasibility of embedded DRAM cells on FinFET technology
E Amat, A Calomarde, F Moll, R Canal, A Rubio
IEEE Transactions on Computers 65 (4), 1068-1074, 2014
152014
SET and noise fault tolerant circuit design techniques: Application to 7 nm FinFET
A Calomarde, E Amat, F Moll, J Vigara, A Rubio
Microelectronics Reliability 54 (4), 738-745, 2014
152014
Variability mitigation mechanisms in scaled 3T1D-DRAM memories to 22 nm and beyond
E Amat, CG Almudever, N Aymerich, R Canal, A Rubio
IEEE Transactions on Device and Materials Reliability 13 (1), 103-109, 2012
132012
Channel Hot-Carrier degradation under static stress in short channel transistors with high-k/metal gate stacks
E Amat, T Kauerauf, R Degraeve, A De Keersgieter, R Rodriguez, ...
2008 9th International Conference on Ultimate Integration of Silicon, 103-106, 2008
132008
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