| Revisit of the band gaps of rutile SnO2 and TiO2: A first-principles study X Cai, P Zhang, SH Wei Journal of Semiconductors 40 (9), 092101, 2019 | 30 | 2019 |
| Approach to achieving a -type transparent conducting oxide: Doping of bismuth-alloyed with a strongly correlated band edge state X Cai, FP Sabino, A Janotti, SH Wei Physical Review B 103 (11), 115205, 2021 | 28 | 2021 |
| Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer S Liu, C Ye, X Cai, S Li, W Lin, J Kang Applied Physics A 122, 1-6, 2016 | 20 | 2016 |
| Origin of Deep Acceptor Levels in Nitride Semiconductors: The Roles of Chemical and Strain Effects X Cai, J Yang, P Zhang, SH Wei Physical Review Applied 11 (3), 034019, 2019 | 19 | 2019 |
| Defect dynamic model of the synergistic effect in neutron-and γ-ray-irradiated silicon NPN transistors Y Song, H Zhou, XF Cai, Y Liu, P Yang, GH Zhang, Y Zhang, M Lan, ... ACS applied materials & interfaces 12 (26), 29993-29998, 2020 | 17 | 2020 |
| Enhanced emission of deep ultraviolet light-emitting diodes through using work function tunable Cu nanowires as the top transparent electrode Z Huang, Z Zhong, H Wang, S Lu, J Wang, G Liu, T Wei, J Yan, JH Min, ... The Journal of Physical Chemistry Letters 11 (7), 2559-2569, 2020 | 17 | 2020 |
| Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers X Cai, S Li, J Kang Superlattices and Microstructures 97, 1-7, 2016 | 14 | 2016 |
| General Model for Defect Dynamics in Ionizing‐Irradiated SiO2‐Si Structures Y Song, G Zhang, X Cai, B Dou, Z Wang, Y Liu, H Zhou, L Zhong, G Dai, ... Small 18 (14), 2107516, 2022 | 12 | 2022 |
| Bismuth-doped Ga2O3 as candidate for p-type transparent conducting material FP Sabino, X Cai, SH Wei, A Janotti arXiv preprint arXiv:1906.00840, 2019 | 11 | 2019 |
| Perspective on the band structure engineering and doping control of transparent conducting materials X Cai, SH Wei Applied Physics Letters 119 (7), 2021 | 10 | 2021 |
| Band gap anomaly in cuprous halides H Yu, X Cai, Y Yang, ZH Wang, SH Wei Computational Materials Science 203, 111157, 2022 | 9 | 2022 |
| Self-catalyzed sensitization of CuO nanowires via a solvent-free click reaction C He, X Cai, SH Wei, A Janotti, AV Teplyakov Langmuir 36 (48), 14539-14545, 2020 | 8 | 2020 |
| Carrier-stabilized hexagonal Ge X Cai, HX Deng, SH Wei Physical Review B 103 (24), 245202, 2021 | 6 | 2021 |
| In2Se3, In2Te3, and In2(Se,Te)3 Alloys as Photovoltaic Materials W Li, XF Cai, N Valdes, T Wang, W Shafarman, SH Wei, A Janotti The Journal of Physical Chemistry Letters 13 (51), 12026-12031, 2022 | 4 | 2022 |
| Overcoming the doping limit in semiconductors via illumination X Cai, JW Luo, SS Li, SH Wei, HX Deng Physical Review B 106 (21), 214102, 2022 | 4 | 2022 |
| Origin of hydrogen passivation in -SiC X Cai, Y Yang, HX Deng, SH Wei Physical Review Materials 5 (6), 064604, 2021 | 4 | 2021 |
| ToF-SIMS Investigation of the Initial Stages of MeCpPt(CH3)3 Adsorption and Decomposition on Nickel Oxide Surfaces: Exploring the Role and Location of the … M Konh, C Lien, X Cai, SH Wei, A Janotti, F Zaera, AV Teplyakov Organometallics 39 (7), 1024-1034, 2020 | 4 | 2020 |
| Band-gap trend of corundum oxides (, Rh, Ir): An ab initio study X Cai, SH Wei, P Deák, C Franchini, SS Li, HX Deng Physical Review B 108 (7), 075137, 2023 | 1 | 2023 |
| Fundamental Identification of Defect‐Related Electron Trap in Hf1−x Zr x O2 Alloy Gate Dielectric on Silicon: Oxygen Vacancy versus Hydrogen Interstitial ZY Liu, CX Zhang, R Cao, X Cai, HX Deng physica status solidi (RRL)–Rapid Research Letters 17 (1), 2200316, 2023 | 1 | 2023 |
| Antiferromagnetism driven charge density wave in infinite-layer nickelates C Zhang, X Cai, CX Zhang, SH Wei, HX Deng Physical Review B 109 (4), 045114, 2024 | | 2024 |
Suhuai WeiBeijing Computational Science Research CenterVerifierad e-postadress på csrc.ac.cn
