| ZnO Coaxial Nanorod Homojunction UV Light‐Emitting Diodes Prepared by Aqueous Solution Method XS Nguyen, CB Tay, EA Fitzgerald, SJ Chua small 8 (8), 1204-1208, 2012 | 43 | 2012 |
| ZnO nanorods with low intrinsic defects and high optical performance grown by facile microwave-assisted solution method J Tang, J Chai, J Huang, L Deng, XS Nguyen, L Sun, T Venkatesan, ... ACS applied materials & interfaces 7 (8), 4737-4743, 2015 | 36 | 2015 |
| Correlation of a generation-recombination center with a deep level trap in GaN XS Nguyen, K Lin, Z Zhang, B McSkimming, AR Arehart, JS Speck, ... Applied Physics Letters 106 (10), 102101, 2015 | 23 | 2015 |
| Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers D Kohen, XS Nguyen, RI Made, C Heidelberger, KH Lee, KEK Lee, ... Journal of Crystal Growth 478, 64-70, 2017 | 22 | 2017 |
| SiGe and III-V materials and devices: New HEMT and LED elements in 0.18-micron CMOS process and design EA Fitzgerald, KE Lee, SF Yoon, SJ Chua, CS Tan, GI Ng, X Zhou, ... ECS Transactions 75 (8), 439, 2016 | 20 | 2016 |
| Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer D Kohen, XS Nguyen, S Yadav, A Kumar, RI Made, C Heidelberger, ... AIP Advances 6 (8), 085106, 2016 | 17 | 2016 |
| Characterisation of defects generated during constant current InGaN-on-silicon LED operation RI Made, Y Gao, GJ Syaranamual, WA Sasangka, L Zhang, XS Nguyen, ... Microelectronics Reliability 76, 561-565, 2017 | 16 | 2017 |
| Low temperature aqueous solution route to reliable p-type doping in ZnO with K: growth chemistry, doping mechanism, and thermal stability CB Tay, J Tang, XS Nguyen, XH Huang, JW Chai, VT Venkatesan, ... The Journal of Physical Chemistry C 116 (45), 24239-24247, 2012 | 9 | 2012 |
| High mobility In0.30Ga0.70As MOSHEMTs on low threading dislocation density 200 mm Si substrates: A technology enabler towards heterogeneous integration of … S Yadav, A Kumar, XS Nguyen, KH Lee, Z Liu, W Xing, S Masudy-Panah, ... 2017 IEEE International Electron Devices Meeting (IEDM), 17.4. 1-17.4. 4, 2017 | 8 | 2017 |
| Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si (111) substrate XS Nguyen, XL Goh, L Zhang, Z Zhang, AR Arehart, SA Ringel, ... Japanese Journal of Applied Physics 55 (6), 060306, 2016 | 8 | 2016 |
| MOCVD growth of high quality InGaAs HEMT layers on large scale Si wafers for heterogeneous integration with Si CMOS XS Nguyen, S Yadav, KH Lee, D Kohen, A Kumar, RI Made, KEK Lee, ... IEEE Transactions on Semiconductor Manufacturing 30 (4), 456-461, 2017 | 7 | 2017 |
| Deep level traps in semi‐polar n‐GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy XS Nguyen, HW Hou, P De Mierry, P Vennéguès, F Tendille, AR Arehart, ... physica status solidi (b) 253 (11), 2225-2229, 2016 | 5 | 2016 |
| Regrowth of GaN on Strain-relief porous GaN template fabricated by Anodized Alumina Oxide mask IJY Kok, CB Soh, NX Sang, TH Lee, A Kadir, SJ Chua Procedia engineering 215, 1-8, 2017 | 2 | 2017 |
| Growth of InGaAs-channel transistor layers on large-scale Si wafers for HeteroIntegration with Si CMOS XS Nguyen, S Yadav, KH Lee, D Kohen, A Kumar, RI Made, X Gong, ... CS Mantech, 2017 | 2 | 2017 |
| In0.30Ga0.70As QW MOSFETs with peak mobility exceeding 3000 cm2/V·s fabricated on Si substrates S Yadav, D Kohen, XS Nguyen, KH Lee, X Gong, D Antoniadis, ... 2016 IEEE Silicon Nanoelectronics Workshop (SNW), 126-127, 2016 | 2 | 2016 |
| Growth and Structure of Zinc Oxide Nanostructured Layer Obtained by Spray Pyrolysis SV Thach, M Jouan, SN Xuan, TN Hoang, HPP Phi Physics and Engineering of New Materials, 171-176, 2009 | 2 | 2009 |
| Deep Level Traps in GaN Epilayer and LED XS Nguyen, SJ Chua Handbook of Solid-State Lighting and LEDs, 161-184, 2017 | | 2017 |
| Reduction in EMI with BaTiO3 and Fe3O4 Thin Film grown by UBM Sputtering OT Ng, CB Soh, HF Liu, XS Nguyen, EYC Ng Procedia engineering 216, 111-126, 2017 | | 2017 |
| Publisher’s Note: “Correlation of a generation-recombination center with a deep level trap in GaN” [Appl. Phys. Lett. 106, 102101 (2015)] XS Nguyen, K Lin, Z Zhang, B McSkimming, AR Arehart, JS Speck, ... Applied Physics Letters 106 (15), 159903, 2015 | | 2015 |
| pn Junction Diode Fabricated From ZnO Nanorod Grown By Aqueous Solution Method NX SANG | | 2012 |
