| A new self-aligned quantum-well MOSFET architecture fabricated by a scalable tight-pitch process J Lin, X Zhao, T Yu, DA Antoniadis, JA Del Alamo 2013 IEEE International Electron Devices Meeting, 16.2. 1-16.2. 4, 2013 | 72 | 2013 |
| Investigation on variability in metal-gate Si nanowire MOSFETs: Analysis of variation sources and experimental characterization R Wang, J Zhuge, R Huang, T Yu, J Zou, DW Kim, D Park, Y Wang IEEE transactions on electron devices 58 (8), 2317-2325, 2011 | 64 | 2011 |
| Investigations on line-edge roughness (LER) and line-width roughness (LWR) in nanoscale CMOS technology: Part II–experimental results and impacts on device variability R Wang, X Jiang, T Yu, J Fan, J Chen, DZ Pan, R Huang IEEE transactions on electron devices 60 (11), 3676-3682, 2013 | 61 | 2013 |
| Investigations on line-edge roughness (LER) and line-width roughness (LWR) in nanoscale CMOS technology: Part I–modeling and simulation method X Jiang, R Wang, T Yu, J Chen, R Huang IEEE Transactions on electron devices 60 (11), 3669-3675, 2013 | 43 | 2013 |
| In0. 53Ga0. 47As/GaAs0. 5Sb0. 5 Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics T Yu, JT Teherani, DA Antoniadis, JL Hoyt Electron Device Letters, IEEE 34 (12), 1503-1505, 2013 | 37* | 2013 |
| Investigation of nanowire line-edge roughness in gate-all-around silicon nanowire MOSFETs T Yu, R Wang, R Huang, J Chen, J Zhuge, Y Wang IEEE transactions on electron devices 57 (11), 2864-2871, 2010 | 36 | 2010 |
| Reducing power consumption for time-of-flight depth imaging C Mathy, S Demirtas, B Huo, D Gajaria, JA Goldberg, N Le Dortz, T Yu, ... US Patent 10,841,491, 2020 | 35 | 2020 |
| High mobility high-κ-all-around asymmetrically-strained germanium nanowire trigate p-MOSFETs W Chern, P Hashemi, JT Teherani, T Yu, Y Dong, G Xia, DA Antoniadis, ... 2012 International Electron Devices Meeting, 16.5. 1-16.5. 4, 2012 | 32 | 2012 |
| Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling R Huang, R Wang, J Zhuge, C Liu, T Yu, L Zhang, X Huang, Y Ai, J Zou, ... 2011 IEEE Custom Integrated Circuits Conference (CICC), 1-8, 2011 | 30 | 2011 |
| Radio frequency ranging using phase difference T Yu US Patent 10,469,184, 2019 | 18 | 2019 |
| Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors RS Wang, T Yu, R Huang, YY Wang Science China Information Sciences 56, 1-7, 2013 | 18 | 2013 |
| Linewidth roughness in nanowire-mask-based graphene nanoribbons G Xu, CM Torres, J Bai, J Tang, T Yu, Y Huang, X Duan, Y Zhang, ... Applied Physics Letters 98 (24), 2011 | 17 | 2011 |
| Quantifying the impact of gate efficiency on switching steepness of quantum-well tunnel-fets: Experiments, modeling, and design guidelines T Yu, U Radhakrishna, JL Hoyt, DA Antoniadis 2015 IEEE International Electron Devices Meeting (IEDM), 22.4. 1-22.4. 4, 2015 | 15 | 2015 |
| Negative-bias temperature instability in gate-all-around silicon nanowire MOSFETs: Characteristic modeling and the impact on circuit aging C Liu, T Yu, R Wang, L Zhang, R Huang, DW Kim, D Park, Y Wang IEEE transactions on electron devices 57 (12), 3442-3450, 2010 | 15 | 2010 |
| Electrostatic design of vertical tunneling field-effect transistors JT Teherani, T Yu, DA Antoniadis, JL Hoyt 2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 1-2, 2013 | 12 | 2013 |
| Microwave detection performance of In0.53Ga0.47As/GaAs0.5Sb0.5 quantum‐well tunnel field‐effect transistors W Li, P Fay, T Yu, J Hoyt Electronics Letters 52 (10), 842-844, 2016 | 9 | 2016 |
| Effects of substrate leakage and drain-side thermal barriers in In0. 53Ga0. 47As/GaAs0. 5Sb0. 5 quantum-well tunneling field-effect transistors T Yu, JT Teherani, DA Antoniadis, JL Hoyt Applied Physics Express 7 (9), 094201, 2014 | 8 | 2014 |
| New observations of suppressed randomization in LER/LWR of Si nanowire transistors: Experiments and mechanism analysis R Wang, T Yu, R Huang, Y Ai, S Pu, Z Hao, J Zhuge, Y Wang 2010 International Electron Devices Meeting, 34.6. 1-34.6. 4, 2010 | 6 | 2010 |
| Tunneling FET fabrication and characterization T Yu, JL Hoyt, DA Antoniadis Tunneling Field Effect Transistor Technology, 33-60, 2016 | 4 | 2016 |
| Self-heating effect and characteristic variability of gate-all-around silicon nanowire transistors for highly-scaled CMOS technology R Huang, RS Wang, J Zhuge, T Yu, YJ Ai, C Fan, SS Pu, JB Zou, ... 2010 IEEE International SOI Conference (SOI), 1-4, 2010 | 4 | 2010 |
