Follow
Runchen Fang
Title
Cited by
Cited by
Year
Low Temperature Characteristics of HfOx-Based Resistive Random Access Memory
R Fang, W Chen, L Gao, W Yu, S Yu
Electron Device Letters, IEEE 36 (6), 567 - 569, 2015
1062015
Low Temperature Characteristics of HfOx-Based Resistive Random Access Memory
R Fang, W Chen, L Gao, ShimengYu
57th Electronic Materials Conference, K2, 2015
1062015
High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition
RC Fang, QQ Sun, P Zhou, W Yang, PF Wang, DW Zhang
Nanoscale research letters 8, 1-7, 2013
832013
A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells
W Chen, R Fang, MB Balaban, W Yu, Y Gonzalez-Velo, HJ Barnaby, ...
Nanotechnology 27 (25), 255202, 2016
802016
Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory
R Fang, Y Gonzalez Velo, W Chen, KE Holbert, MN Kozicki, H Barnaby, ...
Applied Physics Letters 104 (18), 2014
762014
Synthesis and memory characteristics of polyimides containing noncoplanar aryl pendant groups
Y Li, Y Chu, R Fang, S Ding, Y Wang, Y Shen, A Zheng
Polymer 53 (1), 229-240, 2012
752012
Nonvolatile memory devices based on polyimides bearing noncoplanar twisted biphenyl units containing carbazole and triphenylamine side-chain groups
YQ Li, RC Fang, AM Zheng, YY Chu, X Tao, HH Xu, SJ Ding, YZ Shen
Journal of Materials Chemistry 21 (39), 15643-15654, 2011
612011
Exploiting Resistive Cross-point Array for Compact Design of Physical Unclonable Function
PY Chen, R Fang, R Liu, C Chakrabarti, Y Cao, S Yu
IEEE Int. Symposium on Hardware-Oriented Security and Trust, 2015
592015
Method for depositing a gate oxide and a gate electrode selectively
Q Sun, Y Li, R Fang, P Wang, W Zhang
US Patent App. 13/528,446, 2013
432013
Rewritable and Non‐Volatile Memory Effects Based on Polyimides Containing Pendant Carbazole and Triphenylamine Groups
Y Li, R Fang, S Ding, Y Shen
Macromolecular Chemistry and Physics 212 (21), 2360-2370, 2011
322011
A Study of Gamma-ray Exposure of Cu-SiO2 Programmable Metallization Cells
W Chen, H Barnaby, M Kozicki, Y Gonzalez-Velo, R Fang, K Holbert, S Yu, ...
IEEE Transactions on Nuclear Science 62 (6), 2404 - 2411, 2015
312015
A Study of Gamma-Ray Exposure of Cu-SiO2 Programmable Metallization Cells
W Chen, H Barnaby, M Kozicki, Y Gonzalez-Velo, R Fang, K Holbert, S Yu, ...
2015 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2015), A4, 2015
312015
Total-ionizing-dose effects on resistance stability of programmable metallization cell based memory and selectors
W Chen, R Fang, HJ Barnaby, MB Balaban, Y Gonzalez-Velo, JL Taggart, ...
IEEE Transactions on Nuclear Science 64 (1), 269-276, 2016
172016
Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors
W Chen, R Fang, HJ Barnaby, MB Balaban, Y Gonzalez-Velo, JL Taggart, ...
2016 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2016), PD-6, 2016
172016
Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device
X Huang, R Fang, C Yang, K Fu, H Fu, H Chen, TH Yang, J Zhou, ...
Nanotechnology 30 (21), 215201, 2019
122019
Resistive switching of HfO2 based flexible memories fabricated by low temperature atomic layer deposition
RC Fang, LH Wang, W Yang, QQ Sun, P Zhou, PF Wang, SJ Ding, ...
Journal of Vacuum Science & Technology B 30 (2), 020602, 2012
122012
Resistance state locking in CBRAM cells due to displacement damage effects
JL Taggart, R Fang, Y Gonzalez-Velo, HJ Barnaby, MN Kozicki, ...
IEEE Transactions on Nuclear Science 64 (8), 2300-2306, 2017
102017
Effects of 14 MeV Neutron Irradiation on the DC characteristics of CBRAM cells
JL Taggart, R Fang, Y Gonzalez-Velo., HJ Barnaby, MN Kozicki, ...
Radiation Effects On Components and Systems (Radecs) 2016, 2016
82016
The thermal stability of atomic layer deposited HfLaOx: Material and electrical characterization
W Yang, QQ Sun, RC Fang, L Chen, P Zhou, SJ Ding, DW Zhang
Current applied physics 12 (6), 1445-1447, 2012
82012
Compound dielectric anti-copper-diffusion barrier layer for copper connection and manufacturing method thereof
Q Sun, R Fang, S Zheng, W Zhang, W PengFei, P Zhou
US Patent App. 13/920,637, 2014
42014
The system can't perform the operation now. Try again later.
Articles 1–20