| Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots P Hazdra, J Voves, J Oswald, K Kuldová, A Hospodková, E Hulicius, ... Microelectronics Journal 39 (8), 1070-1074, 2008 | 33 | 2008 |
| Metamaterial-inspired perfect tunnelling in semiconductor heterostructures L Jelinek, JD Baena, J Voves, R Marques New Journal of Physics 13 (8), 083011, 2011 | 27 | 2011 |
| Accurate simulation of combined electron and ion irradiated silicon devices for local lifetime tailoring J Vobecky, P Hazdra, J Voves, F Spurny, J Homola Proceedings of the 6th International Symposium on Power Semiconductor …, 1994 | 12 | 1994 |
| Accurate simulation of combined electron and ion irradiated silicon devices for local lifetime tailoring J Vobecky, P Hazdra, J Voves, F Spurny, J Homola Proceedings of the 6th International Symposium on Power Semiconductor …, 1994 | 12 | 1994 |
| InAs δ-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy P Hazdra, J Voves, J Oswald, E Hulicius, J Pangrac, T Šimeček Journal of crystal growth 248, 328-332, 2003 | 9 | 2003 |
| Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas AH Bayani, D Dideban, J Voves, N Moezi Superlattices and Microstructures 105, 110-116, 2017 | 8 | 2017 |
| A perfect lens for ballistic electrons: An electron-light wave analogy I Hrebikova, L Jelinek, J Voves, JD Baena Photonics and Nanostructures-Fundamentals and Applications 12 (1), 9-15, 2014 | 8 | 2014 |
| Gas-sensing behaviour of ZnO/diamond nanostructures M Davydova, A Laposa, J Smarhak, A Kromka, N Neykova, J Nahlik, ... Beilstein Journal of Nanotechnology 9 (1), 22-29, 2018 | 7 | 2018 |
| Lithography on GaMnAs layer by AFM local anodic oxidation in the AC mode M Janoušek, J Halada, J Voves Microelectronic Engineering 87 (5-8), 1066-1069, 2010 | 7 | 2010 |
| The AFM LAO lithography on GaMnAs layers J Voves, M Cukr, V Novák Microelectronic Engineering 86 (4-6), 561-564, 2009 | 7 | 2009 |
| Lasers with δ InAs layers in GaAs J Oswald, E Hulicius, J Pangrác, K Melichar, T Šimeček, O Petřı́ček, ... Materials Science and Engineering: B 88 (2-3), 312-316, 2002 | 7 | 2002 |
| Analysis of the resonant tunneling diode with the stepped pre-barrier R Yatskiv, J Voves Journal of physics: conference series 193 (1), 012007, 2009 | 5 | 2009 |
| Reaction of 1, 2-difluoroethylene with fluorotrichloromethane in the presence of aluminum chloride, and relative reactivity of fluorinated hydroethylenes A Pošta, O Paleta, J Voves Collection of Czechoslovak Chemical Communications 39 (10), 2801-2807, 1974 | 5 | 1974 |
| Performance Evaluation of Low-Cost Flexible Gas Sensor Array With Nanocomposite Polyaniline Films J Kroutil, A Laposa, J Voves, M Davydova, J Nahlik, P Kulha, M Husak IEEE Sensors Journal 18 (9), 3759-3766, 2018 | 4 | 2018 |
| Effective mass approximation versus full atomistic model to calculate the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET) AH Bayani, J Voves, D Dideban Superlattices and Microstructures 113, 769-776, 2018 | 4 | 2018 |
| Fyzika polovodičových součástek J Voves ČVUT, 1997 | 4 | 1997 |
| Nanostructures defined by the local oxidation of the ferromagnetic GaMnAs layer J Voves, Z Šobáň, M Janoušek, V Komarnickij, M Cukr, V Novák Microelectronics Journal 40 (4-5), 697-705, 2009 | 3 | 2009 |
| NEGF simulation of the RTD bistability J Voves, T Třebický, R Jackiv Journal of Computational Electronics 6 (1-3), 259-262, 2007 | 3 | 2007 |
| Ultrathin InAs and modulated InGaAs layers in GaAs grown by MOVPE studied by photomodulated reflectance spectroscopy P Hazdra, J Voves, E Hulicius, J Pangrác, Z Šourek Applied surface science 253 (1), 85-89, 2006 | 2 | 2006 |
| Trends and skill needs in the field of nanotechnology–the state of affaires in the Czech Republic in the European Context J Voves International Workshop Emerging Technologies: new skill needs in the field …, 2005 | 2 | 2005 |
