Jan Voves
Jan Voves
Verified email at fel.cvut.cz
TitleCited byYear
Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots
P Hazdra, J Voves, J Oswald, K Kuldová, A Hospodková, E Hulicius, ...
Microelectronics Journal 39 (8), 1070-1074, 2008
332008
Metamaterial-inspired perfect tunnelling in semiconductor heterostructures
L Jelinek, JD Baena, J Voves, R Marques
New Journal of Physics 13 (8), 083011, 2011
272011
Accurate simulation of combined electron and ion irradiated silicon devices for local lifetime tailoring
J Vobecky, P Hazdra, J Voves, F Spurny, J Homola
Proceedings of the 6th International Symposium on Power Semiconductor …, 1994
121994
Accurate simulation of combined electron and ion irradiated silicon devices for local lifetime tailoring
J Vobecky, P Hazdra, J Voves, F Spurny, J Homola
Proceedings of the 6th International Symposium on Power Semiconductor …, 1994
121994
InAs δ-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
P Hazdra, J Voves, J Oswald, E Hulicius, J Pangrac, T Šimeček
Journal of crystal growth 248, 328-332, 2003
92003
Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas
AH Bayani, D Dideban, J Voves, N Moezi
Superlattices and Microstructures 105, 110-116, 2017
82017
A perfect lens for ballistic electrons: An electron-light wave analogy
I Hrebikova, L Jelinek, J Voves, JD Baena
Photonics and Nanostructures-Fundamentals and Applications 12 (1), 9-15, 2014
82014
Gas-sensing behaviour of ZnO/diamond nanostructures
M Davydova, A Laposa, J Smarhak, A Kromka, N Neykova, J Nahlik, ...
Beilstein Journal of Nanotechnology 9 (1), 22-29, 2018
72018
Lithography on GaMnAs layer by AFM local anodic oxidation in the AC mode
M Janoušek, J Halada, J Voves
Microelectronic Engineering 87 (5-8), 1066-1069, 2010
72010
The AFM LAO lithography on GaMnAs layers
J Voves, M Cukr, V Novák
Microelectronic Engineering 86 (4-6), 561-564, 2009
72009
Lasers with δ InAs layers in GaAs
J Oswald, E Hulicius, J Pangrác, K Melichar, T Šimeček, O Petřı́ček, ...
Materials Science and Engineering: B 88 (2-3), 312-316, 2002
72002
Analysis of the resonant tunneling diode with the stepped pre-barrier
R Yatskiv, J Voves
Journal of physics: conference series 193 (1), 012007, 2009
52009
Reaction of 1, 2-difluoroethylene with fluorotrichloromethane in the presence of aluminum chloride, and relative reactivity of fluorinated hydroethylenes
A Pošta, O Paleta, J Voves
Collection of Czechoslovak Chemical Communications 39 (10), 2801-2807, 1974
51974
Performance Evaluation of Low-Cost Flexible Gas Sensor Array With Nanocomposite Polyaniline Films
J Kroutil, A Laposa, J Voves, M Davydova, J Nahlik, P Kulha, M Husak
IEEE Sensors Journal 18 (9), 3759-3766, 2018
42018
Effective mass approximation versus full atomistic model to calculate the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET)
AH Bayani, J Voves, D Dideban
Superlattices and Microstructures 113, 769-776, 2018
42018
Fyzika polovodičových součástek
J Voves
ČVUT, 1997
41997
Nanostructures defined by the local oxidation of the ferromagnetic GaMnAs layer
J Voves, Z Šobáň, M Janoušek, V Komarnickij, M Cukr, V Novák
Microelectronics Journal 40 (4-5), 697-705, 2009
32009
NEGF simulation of the RTD bistability
J Voves, T Třebický, R Jackiv
Journal of Computational Electronics 6 (1-3), 259-262, 2007
32007
Ultrathin InAs and modulated InGaAs layers in GaAs grown by MOVPE studied by photomodulated reflectance spectroscopy
P Hazdra, J Voves, E Hulicius, J Pangrác, Z Šourek
Applied surface science 253 (1), 85-89, 2006
22006
Trends and skill needs in the field of nanotechnology–the state of affaires in the Czech Republic in the European Context
J Voves
International Workshop Emerging Technologies: new skill needs in the field …, 2005
22005
The system can't perform the operation now. Try again later.
Articles 1–20