|A proposal on an optimized device structure with experimental studies on recent devices for the DRAM cell transistor|
MJ Lee, S Jin, CK Baek, SM Hong, SY Park, HH Park, SD Lee, SW Chung, ...
IEEE Transactions on Electron Devices 54 (12), 3325-3335, 2007
|Electrical characteristics of 20-nm junctionless Si nanowire transistors|
CH Park, MD Ko, KH Kim, RH Baek, CW Sohn, CK Baek, S Park, MJ Deen, ...
Solid-State Electronics 73, 7-10, 2012
|Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics|
S Kim, T Rim, K Kim, U Lee, E Baek, H Lee, CK Baek, M Meyyappan, ...
Analyst 136 (23), 5012-5016, 2011
|High efficiency silicon solar cell based on asymmetric nanowire|
MD Ko, T Rim, K Kim, M Meyyappan, CK Baek
Scientific reports 5 (1), 1-8, 2015
|Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector|
M Shaygan, K Davami, N Kheirabi, CK Baek, G Cuniberti, M Meyyappan
Physical Chemistry Chemical Physics, 2014
|Chemical gated field effect transistor by hybrid integration of one-dimensional silicon nanowire and two-dimensional tin oxide thin film for low power gas sensor|
JW Han, T Rim, CK Baek, M Meyyappan
ACS applied materials & interfaces 7 (38), 21263-21269, 2015
|Nanowire sensors monitor bacterial growth kinetics and response to antibiotics|
B Ibarlucea, T Rim, CK Baek, J De Visser, L Baraban, G Cuniberti
Lab on a Chip 17 (24), 4283-4293, 2017
|Negative photoconductance in heavily doped Si nanowire field-effect transistors|
E Baek, T Rim, J Schütt, C Baek, K Kim, L Baraban, G Cuniberti
Nano letters 17 (11), 6727-6734, 2017
|Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the Y-function technique|
RH Baek, CK Baek, SW Jung, YY Yeoh, DW Kim, JS Lee, DM Kim, ...
IEEE Transactions on Nanotechnology 9 (2), 212-217, 2010
|Study on a scaling length model for tapered tri-gate FinFET based on 3-D simulation and analytical analysis|
MD Ko, CW Sohn, CK Baek, YH Jeong
IEEE transactions on electron devices 60 (9), 2721-2727, 2013
|Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors|
JS Yoon, T Rim, J Kim, K Kim, CK Baek, YH Jeong
Applied Physics Letters 106 (10), 103507, 2015
|Improved electrical characteristics of honeycomb nanowire ISFETs|
T Rim, K Kim, S Kim, CK Baek, M Meyyappan, YH Jeong, JS Lee
IEEE electron device letters 34 (8), 1059-1061, 2013
|Vertical gate-all-around junctionless nanowire transistors with asymmetric diameters and underlap lengths|
JS Yoon, T Rim, J Kim, M Meyyappan, CK Baek, YH Jeong
Applied Physics Letters 105 (10), 102105, 2014
|Characterization of channel-diameter-dependent low-frequency noise in silicon nanowire field-effect transistors|
SH Lee, CK Baek, S Park, DW Kim, DK Sohn, JS Lee, DM Kim, YH Jeong
IEEE electron device letters 33 (10), 1348-1350, 2012
|Two‐Dimensional Boronate Ester Covalent Organic Framework Thin Films with Large Single Crystalline Domains for a Neuromorphic Memory Device|
SW Park, Z Liao, B Ibarlucea, H Qi, HH Lin, D Becker, J Melidonie, ...
Angewandte Chemie 132 (21), 8295-8301, 2020
|Junction design strategy for Si bulk FinFETs for system-on-chip applications down to the 7-nm node|
JS Yoon, EY Jeong, CK Baek, YR Kim, JH Hong, JS Lee, RH Baek, ...
IEEE Electron Device Letters 36 (10), 994-996, 2015
|Characterization and modeling of 1/f noise in Si-nanowire FETs: effects of cylindrical geometry and different processing of oxides|
RH Baek, CK Baek, HS Choi, JS Lee, YY Yeoh, KH Yeo, DW Kim, K Kim, ...
IEEE Transactions on Nanotechnology 10 (3), 417-423, 2011
|Analytic model of S/D series resistance in trigate FinFETs with polygonal epitaxy|
CW Sohn, CY Kang, MD Ko, DY Choi, HC Sagong, EY Jeong, CH Park, ...
IEEE transactions on electron devices 60 (4), 1302-1309, 2013
|Investigation of the electrical stability of Si-nanowire biologically sensitive field-effect transistors with embedded Ag/AgCl pseudo reference electrode|
T Rim, K Kim, N Hong, W Ko, CK Baek, S Jeon, MJ Deen, M Meyyappan, ...
RSC advances 3 (21), 7963-7969, 2013
|Performance and variations induced by single interface trap of nanowire FETs at 7-nm node|
JS Yoon, K Kim, T Rim, CK Baek
IEEE Transactions on Electron Devices 64 (2), 339-345, 2016