| A proposal on an optimized device structure with experimental studies on recent devices for the DRAM cell transistor MJ Lee, S Jin, CK Baek, SM Hong, SY Park, HH Park, SD Lee, SW Chung, ... IEEE Transactions on Electron Devices 54 (12), 3325-3335, 2007 | 134 | 2007 |
| Electrical characteristics of 20-nm junctionless Si nanowire transistors CH Park, MD Ko, KH Kim, RH Baek, CW Sohn, CK Baek, S Park, MJ Deen, ... Solid-State Electronics 73, 7-10, 2012 | 128 | 2012 |
| Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics S Kim, T Rim, K Kim, U Lee, E Baek, H Lee, CK Baek, M Meyyappan, ... Analyst 136 (23), 5012-5016, 2011 | 77 | 2011 |
| High efficiency silicon solar cell based on asymmetric nanowire MD Ko, T Rim, K Kim, M Meyyappan, CK Baek Scientific reports 5 (1), 1-8, 2015 | 51 | 2015 |
| Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector M Shaygan, K Davami, N Kheirabi, CK Baek, G Cuniberti, M Meyyappan Physical Chemistry Chemical Physics, 2014 | 46 | 2014 |
| Chemical gated field effect transistor by hybrid integration of one-dimensional silicon nanowire and two-dimensional tin oxide thin film for low power gas sensor JW Han, T Rim, CK Baek, M Meyyappan ACS applied materials & interfaces 7 (38), 21263-21269, 2015 | 40 | 2015 |
| Nanowire sensors monitor bacterial growth kinetics and response to antibiotics B Ibarlucea, T Rim, CK Baek, J De Visser, L Baraban, G Cuniberti Lab on a Chip 17 (24), 4283-4293, 2017 | 36 | 2017 |
| Negative photoconductance in heavily doped Si nanowire field-effect transistors E Baek, T Rim, J Schütt, C Baek, K Kim, L Baraban, G Cuniberti Nano letters 17 (11), 6727-6734, 2017 | 33 | 2017 |
| Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the Y-function technique RH Baek, CK Baek, SW Jung, YY Yeoh, DW Kim, JS Lee, DM Kim, ... IEEE Transactions on Nanotechnology 9 (2), 212-217, 2010 | 33 | 2010 |
| Study on a scaling length model for tapered tri-gate FinFET based on 3-D simulation and analytical analysis MD Ko, CW Sohn, CK Baek, YH Jeong IEEE transactions on electron devices 60 (9), 2721-2727, 2013 | 31 | 2013 |
| Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors JS Yoon, T Rim, J Kim, K Kim, CK Baek, YH Jeong Applied Physics Letters 106 (10), 103507, 2015 | 28 | 2015 |
| Improved electrical characteristics of honeycomb nanowire ISFETs T Rim, K Kim, S Kim, CK Baek, M Meyyappan, YH Jeong, JS Lee IEEE electron device letters 34 (8), 1059-1061, 2013 | 28 | 2013 |
| Vertical gate-all-around junctionless nanowire transistors with asymmetric diameters and underlap lengths JS Yoon, T Rim, J Kim, M Meyyappan, CK Baek, YH Jeong Applied Physics Letters 105 (10), 102105, 2014 | 27 | 2014 |
| Characterization of channel-diameter-dependent low-frequency noise in silicon nanowire field-effect transistors SH Lee, CK Baek, S Park, DW Kim, DK Sohn, JS Lee, DM Kim, YH Jeong IEEE electron device letters 33 (10), 1348-1350, 2012 | 25 | 2012 |
| Two‐Dimensional Boronate Ester Covalent Organic Framework Thin Films with Large Single Crystalline Domains for a Neuromorphic Memory Device SW Park, Z Liao, B Ibarlucea, H Qi, HH Lin, D Becker, J Melidonie, ... Angewandte Chemie 132 (21), 8295-8301, 2020 | 24 | 2020 |
| Junction design strategy for Si bulk FinFETs for system-on-chip applications down to the 7-nm node JS Yoon, EY Jeong, CK Baek, YR Kim, JH Hong, JS Lee, RH Baek, ... IEEE Electron Device Letters 36 (10), 994-996, 2015 | 23 | 2015 |
| Characterization and modeling of 1/f noise in Si-nanowire FETs: effects of cylindrical geometry and different processing of oxides RH Baek, CK Baek, HS Choi, JS Lee, YY Yeoh, KH Yeo, DW Kim, K Kim, ... IEEE Transactions on Nanotechnology 10 (3), 417-423, 2011 | 23 | 2011 |
| Analytic model of S/D series resistance in trigate FinFETs with polygonal epitaxy CW Sohn, CY Kang, MD Ko, DY Choi, HC Sagong, EY Jeong, CH Park, ... IEEE transactions on electron devices 60 (4), 1302-1309, 2013 | 22 | 2013 |
| Investigation of the electrical stability of Si-nanowire biologically sensitive field-effect transistors with embedded Ag/AgCl pseudo reference electrode T Rim, K Kim, N Hong, W Ko, CK Baek, S Jeon, MJ Deen, M Meyyappan, ... RSC advances 3 (21), 7963-7969, 2013 | 22 | 2013 |
| Performance and variations induced by single interface trap of nanowire FETs at 7-nm node JS Yoon, K Kim, T Rim, CK Baek IEEE Transactions on Electron Devices 64 (2), 339-345, 2016 | 21 | 2016 |
Taiuk RimPohang University of Science and TechnologyVerified email at postech.ac.kr
