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A proposal on an optimized device structure with experimental studies on recent devices for the DRAM cell transistor
MJ Lee, S Jin, CK Baek, SM Hong, SY Park, HH Park, SD Lee, SW Chung, ...
IEEE Transactions on Electron Devices 54 (12), 3325-3335, 2007
Electrical characteristics of 20-nm junctionless Si nanowire transistors
CH Park, MD Ko, KH Kim, RH Baek, CW Sohn, CK Baek, S Park, MJ Deen, ...
Solid-State Electronics 73, 7-10, 2012
Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics
S Kim, T Rim, K Kim, U Lee, E Baek, H Lee, CK Baek, M Meyyappan, ...
Analyst 136 (23), 5012-5016, 2011
High efficiency silicon solar cell based on asymmetric nanowire
MD Ko, T Rim, K Kim, M Meyyappan, CK Baek
Scientific reports 5 (1), 1-8, 2015
Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector
M Shaygan, K Davami, N Kheirabi, CK Baek, G Cuniberti, M Meyyappan
Physical Chemistry Chemical Physics, 2014
Chemical gated field effect transistor by hybrid integration of one-dimensional silicon nanowire and two-dimensional tin oxide thin film for low power gas sensor
JW Han, T Rim, CK Baek, M Meyyappan
ACS applied materials & interfaces 7 (38), 21263-21269, 2015
Nanowire sensors monitor bacterial growth kinetics and response to antibiotics
B Ibarlucea, T Rim, CK Baek, J De Visser, L Baraban, G Cuniberti
Lab on a Chip 17 (24), 4283-4293, 2017
Negative photoconductance in heavily doped Si nanowire field-effect transistors
E Baek, T Rim, J Schütt, C Baek, K Kim, L Baraban, G Cuniberti
Nano letters 17 (11), 6727-6734, 2017
Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the Y-function technique
RH Baek, CK Baek, SW Jung, YY Yeoh, DW Kim, JS Lee, DM Kim, ...
IEEE Transactions on Nanotechnology 9 (2), 212-217, 2010
Study on a scaling length model for tapered tri-gate FinFET based on 3-D simulation and analytical analysis
MD Ko, CW Sohn, CK Baek, YH Jeong
IEEE transactions on electron devices 60 (9), 2721-2727, 2013
Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors
JS Yoon, T Rim, J Kim, K Kim, CK Baek, YH Jeong
Applied Physics Letters 106 (10), 103507, 2015
Improved electrical characteristics of honeycomb nanowire ISFETs
T Rim, K Kim, S Kim, CK Baek, M Meyyappan, YH Jeong, JS Lee
IEEE electron device letters 34 (8), 1059-1061, 2013
Vertical gate-all-around junctionless nanowire transistors with asymmetric diameters and underlap lengths
JS Yoon, T Rim, J Kim, M Meyyappan, CK Baek, YH Jeong
Applied Physics Letters 105 (10), 102105, 2014
Characterization of channel-diameter-dependent low-frequency noise in silicon nanowire field-effect transistors
SH Lee, CK Baek, S Park, DW Kim, DK Sohn, JS Lee, DM Kim, YH Jeong
IEEE electron device letters 33 (10), 1348-1350, 2012
Two‐Dimensional Boronate Ester Covalent Organic Framework Thin Films with Large Single Crystalline Domains for a Neuromorphic Memory Device
SW Park, Z Liao, B Ibarlucea, H Qi, HH Lin, D Becker, J Melidonie, ...
Angewandte Chemie 132 (21), 8295-8301, 2020
Junction design strategy for Si bulk FinFETs for system-on-chip applications down to the 7-nm node
JS Yoon, EY Jeong, CK Baek, YR Kim, JH Hong, JS Lee, RH Baek, ...
IEEE Electron Device Letters 36 (10), 994-996, 2015
Characterization and modeling of 1/f noise in Si-nanowire FETs: effects of cylindrical geometry and different processing of oxides
RH Baek, CK Baek, HS Choi, JS Lee, YY Yeoh, KH Yeo, DW Kim, K Kim, ...
IEEE Transactions on Nanotechnology 10 (3), 417-423, 2011
Analytic model of S/D series resistance in trigate FinFETs with polygonal epitaxy
CW Sohn, CY Kang, MD Ko, DY Choi, HC Sagong, EY Jeong, CH Park, ...
IEEE transactions on electron devices 60 (4), 1302-1309, 2013
Investigation of the electrical stability of Si-nanowire biologically sensitive field-effect transistors with embedded Ag/AgCl pseudo reference electrode
T Rim, K Kim, N Hong, W Ko, CK Baek, S Jeon, MJ Deen, M Meyyappan, ...
RSC advances 3 (21), 7963-7969, 2013
Performance and variations induced by single interface trap of nanowire FETs at 7-nm node
JS Yoon, K Kim, T Rim, CK Baek
IEEE Transactions on Electron Devices 64 (2), 339-345, 2016
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