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Yonas Assefa Eshete
Yonas Assefa Eshete
Peter Grunberg institute (PGI), Forschungszentrum Juelich
Verified email at fz-juelich.de - Homepage
Title
Cited by
Cited by
Year
Synaptic computation enabled by joule heating of single-layered semiconductors for sound localization
L Sun, Y Zhang, G Hwang, J Jiang, D Kim, YA Eshete, R Zhao, H Yang
Nano letters 18 (5), 3229-3234, 2018
1532018
Vertical Heterophase for Electrical, Electrochemical, and Mechanical Manipulations of Layered MoTe2
YA Eshete, N Ling, S Kim, D Kim, G Hwang, S Cho, H Yang
Advanced Functional Materials 29 (40), 1904504, 2019
412019
Heterophase Boundary for Active Hydrogen Evolution in MoTe2
Y Lee, N Ling, D Kim, M Zhao, YA Eshete, E Kim, S Cho, H Yang
Advanced Functional Materials 32 (10), 2105675, 2022
272022
Doping-Mediated Lattice Engineering of Monolayer ReS2 for Modulating In-Plane Anisotropy of Optical and Transport Properties
G Ghimire, KP Dhakal, W Choi, YA Esthete, SJ Kim, TT Tran, H Lee, ...
ACS nano 15 (8), 13770-13780, 2021
162021
A polymorphic memtransistor with tunable metallic and semiconducting channel
YA Eshete, E Hwang, J Kim, PL Nguyen, WJ Yu, BS Kong, MS Jang, ...
Advanced Materials 35 (15), 2209089, 2023
72023
Bandgap modulation in the two-dimensional core-shell-structured monolayers of WS2
S Kang, YA Eshete, S Lee, D Won, S Im, S Lee, S Cho, H Yang
Iscience 25 (1), 2022
52022
Atomic and electronic manipulation of robust ferroelectric polymorphs
YA Eshete, K Kang, S Kang, Y Kim, PL Nguyen, DY Cho, Y Kim, J Lee, ...
Advanced Materials 34 (31), 2202633, 2022
42022
Local phase transition at crack edges of Mo1− xWxTe2 polymorphs
HH Lee, E Lim, S Kang, YA Eshete, D Won, Y Lee, J Jeong, H Yang, ...
Applied Surface Science 596, 153503, 2022
32022
Semiconductor device
H Yang, E Hwang, YA Eshete
US Patent App. 18/154,959, 2024
2024
Ferroelectric thin film
H Yang, E Hwang, YA Eshete
US Patent App. 18/151,810, 2023
2023
반도체 소자/Semiconductor device
YA Eshete
KR Patent R-2022-0124-KR-1 (UP-320301-KR), 2022
2022
2차원 소재 원자 제어를 통한 강유전체 소자/Ferroelectric device through two-dimensional material
HYEHYA Eshete
KR Patent R-2022-0123-KR-1 (UP-320300-KR), 2022
2022
Efficient hydrogen evolution reaction at the phase transition boundary of polymorphic Mo1− xWxTe2
JH Kim, DY Lee, YA Eshete, H Yang, S Cho
APL Materials 10 (6), 2022
2022
Room Temperature Monoclinic to Orthorhombic Phase Transition in 2D MoTe2 via W Substitution
YAE Heejun Yang
Electronic materials and Nanotechnology for Green Environment, 078-079, 2021
2021
Vertical heterophase 2D Transition-metal dichalcogenides enabling novel catalyst and large-scale monolayer exfoliation
YAE Ling Ning, Sera Kim, Suyeon Cho, Heejun Yang
E-MRS Conference Proceeding, 2019
2019
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