| Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer S Choi, HJ Kim, SS Kim, J Liu, J Kim, JH Ryou, RD Dupuis, AM Fischer, ... Applied Physics Letters 96 (22), 221105, 2010 | 245 | 2010 |
| Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes HJ Kim, S Choi, SS Kim, JH Ryou, PD Yoder, RD Dupuis, AM Fischer, ... Applied Physics Letters 96 (10), 101102, 2010 | 116 | 2010 |
| Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Z Lochner, TT Kao, YS Liu, XH Li, MM Satter, SC Shen, PD Yoder, ... Applied Physics Letters 102 (10), 101110, 2013 | 96 | 2013 |
| Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers S Choi, MH Ji, J Kim, HJ Kim, MM Satter, PD Yoder, JH Ryou, RD Dupuis, ... Applied Physics Letters 101 (16), 161110, 2012 | 96 | 2012 |
| Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates XH Li, T Detchprohm, TT Kao, MM Satter, SC Shen, PD Yoder, RD Dupuis, ... Applied Physics Letters 105 (14), 141106, 2014 | 94 | 2014 |
| Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN AM Fischer, Z Wu, K Sun, Q Wei, Y Huang, R Senda, D Iida, M Iwaya, ... Applied Physics Express 2 (4), 041002, 2009 | 84 | 2009 |
| Structural and optical properties of nonpolar GaN thin films ZH Wu, AM Fischer, FA Ponce, B Bastek, J Christen, T Wernicke, ... Applied Physics Letters 92 (17), 171904-171904-3, 2008 | 84 | 2008 |
| Control of quantum-confined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes JH Ryou, W Lee, J Limb, D Yoo, JP Liu, RD Dupuis, ZH Wu, AM Fischer, ... Applied Physics Letters 92 (10), 1113, 2008 | 80 | 2008 |
| Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells T Li, AM Fischer, QY Wei, FA Ponce, T Detchprohm, C Wetzel Applied Physics Letters 96 (3), 031906, 2010 | 69 | 2010 |
| Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN BP Gunning, CAM Fabien, JJ Merola, EA Clinton, WA Doolittle, S Wang, ... Journal of Applied Physics 117 (4), 045710, 2015 | 68 | 2015 |
| Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions J Kim, Z Lochner, MH Ji, S Choi, HJ Kim, JS Kim, RD Dupuis, AM Fischer, ... Journal of Crystal Growth 388, 143-149, 2014 | 66 | 2014 |
| Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate XH Li, TT Kao, MM Satter, YO Wei, S Wang, H Xie, SC Shen, PD Yoder, ... Applied Physics Letters 106 (4), 041115, 2015 | 63 | 2015 |
| Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating S Choi, HJ Kim, Z Lochner, J Kim, RD Dupuis, AM Fischer, R Juday, ... Journal of Crystal Growth 388, 137-142, 2014 | 59 | 2014 |
| Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation AM Fischer, YO Wei, FA Ponce, M Moseley, B Gunning, WA Doolittle Applied Physics Letters 103 (13), 131101, 2013 | 57 | 2013 |
| Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition XH Li, S Wang, H Xie, YO Wei, TT Kao, M Satter, SC Shen, ... physica status solidi (b) 252 (5), 1089-1095, 2015 | 55 | 2015 |
| Low-temperature growth of InGaN films over the entire composition range by MBE CAM Fabien, BP Gunning, WA Doolittle, AM Fischer, YO Wei, H Xie, ... Journal of Crystal Growth 425, 115-118, 2015 | 49 | 2015 |
| Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors TT Kao, YS Liu, MM Satter, XH Li, Z Lochner, PD Yoder, T Detchprohm, ... Applied Physics Letters 103 (21), 211103, 2013 | 46 | 2013 |
| Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition XH Li, YO Wei, S Wang, H Xie, TT Kao, MM Satter, SC Shen, PD Yoder, ... Journal of Crystal Growth 414, 76-80, 2015 | 40 | 2015 |
| Blue light emitting diodes grown on freestanding (11-20) -plane GaN substrates JP Liu, JB Limb, JH Ryou, D Yoo, CA Horne, RD Dupuis, ZH Wu, ... Applied Physics Letters 92 (1), 011123, 2008 | 40 | 2008 |
| Role of the buffer layer thickness on the formation of basal plane stacking faults in a-plane GaN epitaxy on r-sapphire ZH Wu, AM Fischer, FA Ponce, T Yokogawa, S Yoshida, R Kato Applied Physics Letters 93 (1), 011901, 2008 | 36 | 2008 |
