| A stateful logic family based on a new logic primitive circuit composed of two antiparallel bipolar memristors N Xu, TG Park, HJ Kim, X Shao, KJ Yoon, TH Park, L Fang, KM Kim, ... Advanced Intelligent Systems 2 (1), 1900082, 2020 | 49 | 2020 |
| A 625kHz-BW, 79.3 dB-SNDR second-order noise-shaping SAR ADC using high-efficiency error-feedback structure P Yi, Y Liang, S Liu, N Xu, L Fang, Y Hao IEEE Transactions on Circuits and Systems II: Express Briefs 69 (3), 859-863, 2021 | 46 | 2021 |
| Fully Functional Logic‐In‐Memory Operations Based on a Reconfigurable Finite‐State Machine Using a Single Memristor N Xu, KJ Yoon, KM Kim, L Fang, CS Hwang Advanced Electronic Materials 4 (11), 1800189, 2018 | 46 | 2018 |
| In‐memory stateful logic computing using memristors: gate, calculation, and application N Xu, T Park, KJ Yoon, CS Hwang physica status solidi (RRL)–Rapid Research Letters 15 (9), 2100208, 2021 | 37 | 2021 |
| Single‐Cell Stateful Logic Using a Dual‐Bit Memristor KM Kim, N Xu, X Shao, KJ Yoon, HJ Kim, RS Williams, CS Hwang physica status solidi (RRL)–Rapid Research Letters 13 (3), 1800629, 2019 | 29 | 2019 |
| Forming compliance dominated memristive switching through interfacial reaction in Ti/TiO2/Au structure Z Tang, L Fang, N Xu, R Liu Journal of Applied Physics 118 (18), 2015 | 22 | 2015 |
| Terahertz Generation via Picosecond Spin-to-Charge Conversion in Heterojunction C Li, B Fang, L Zhang, Q Chen, X Xie, N Xu, Z Zeng, Z Wang, L Fang, ... Physical Review Applied 16 (2), 024058, 2021 | 19 | 2021 |
| Time‐Efficient Stateful Dual‐Bit‐Memristor Logic N Xu, L Fang, KM Kim, CS Hwang physica status solidi (RRL)–Rapid Research Letters 13 (6), 1900033, 2019 | 19 | 2019 |
| Efficient and optimized methods for alleviating the impacts of IR-drop and fault in RRAM based neural computing systems C Huang, N Xu, K Qiu, Y Zhu, D Ma, L Fang IEEE Journal of the Electron Devices Society 9, 645-652, 2021 | 16 | 2021 |
| Spin-torque nano-oscillators based on radial vortex in the presence of interface Dzyaloshinskii-Moriya interaction C Li, S Wang, N Xu, X Yang, B Liu, B Yang, L Fang Journal of Magnetism and Magnetic Materials 498, 166155, 2020 | 15 | 2020 |
| A forming-free ReRAM cell with low operating voltage B Yang, N Xu, C Li, C Huang, D Ma, J Liu, D Arumí, L Fang IEICE Electronics Express 17 (22), 20200343-20200343, 2020 | 13 | 2020 |
| A method of generating random bits by using electronic bipolar memristor BB Yang, N Xu, ER Zhou, ZW Li, C Li, PY Yi, L Fang Chinese Physics B 29 (4), 048505, 2020 | 9 | 2020 |
| In situ control of radial vortex polarity at room temperature utilizing perpendicular magnetic field pulse C Li, L Fang, X Yang, N Xu, B Liu, B Wei, E Zhou, B Yang Journal of Physics D: Applied Physics 53 (1), 015001, 2019 | 7 | 2019 |
| Error detection and correction method toward fully memristive stateful logic design Z Li, H Long, X Zhu, Y Wang, H Liu, Q Li, N Xu, H Xu Advanced Intelligent Systems 4 (5), 2100234, 2022 | 6 | 2022 |
| A generalized model of TiOx-based memristive devices and its application for image processing J Zhang, Z Tang, N Xu, Y Wang, H Sun, Z Wang, L Fang Chinese Physics B 26 (9), 090502, 2017 | 5 | 2017 |
| Voltage manipulation of desired magnetization orientation in multiferroic heterostructures J Liu, X Yang, D Hong, C Li, N Xu, B Yang, L Fang Scripta Materialia 193, 132-136, 2021 | 4 | 2021 |
| Voltage-induced magnetization switching method utilizing dipole coupled magnetic tunnel junction J Liu, L Huang, X Yang, C Li, N Xu, B Yang, Z Duan, L Zhu, L Fang Journal of Magnetism and Magnetic Materials 513, 167105, 2020 | 4 | 2020 |
| Resistance uniformity of TiO2 memristor with different thin film thickness N Xu, L Fang, Y Chi, C Zhang, Z Tang 14th IEEE International Conference on Nanotechnology, 727-731, 2014 | 4 | 2014 |
| Rescuing reram-based neural computing systems from device variation C Huang, N Xu, J Zeng, W Wang, Y Hu, L Fang, D Ma, Y Chen ACM Transactions on Design Automation of Electronic Systems 28 (1), 1-17, 2022 | 3 | 2022 |
| A dual-bit spin-based analog-to-digital converter with double-check estimation X Qi, P Yi, J Liu, C Li, Y Chen, S Qiu, N Xu, L Fang IEEE Magnetics Letters 12, 1-5, 2021 | 3 | 2021 |
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National UniversityVerified email at snu.ac.kr
