High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy ECH Kyle, SW Kaun, PG Burke, F Wu, YR Wu, JS Speck Journal of applied physics 115 (19), 2014 | 135 | 2014 |
Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ... IEEE Transactions on Nuclear Science 60 (6), 4080-4086, 2013 | 115 | 2013 |
Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures SW Kaun, PG Burke, M Hoi Wong, ECH Kyle, UK Mishra, JS Speck Applied Physics Letters 101 (26), 2012 | 90 | 2012 |
GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy SW Kaun, E Ahmadi, B Mazumder, F Wu, ECH Kyle, PG Burke, UK Mishra, ... Semiconductor Science and Technology 29 (4), 045011, 2014 | 62 | 2014 |
Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ... IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018 | 56 | 2018 |
Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs R Jiang, EX Zhang, MW McCurdy, J Chen, X Shen, P Wang, ... IEEE Transactions on Nuclear Science 64 (1), 218-225, 2016 | 53 | 2016 |
Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN ECH Kyle, SW Kaun, EC Young, JS Speck Applied Physics Letters 106 (22), 2015 | 44 | 2015 |
Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy Z Zhang, AR Arehart, ECH Kyle, J Chen, EX Zhang, DM Fleetwood, ... Applied Physics Letters 106 (2), 2015 | 42 | 2015 |
Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy SW Kaun, B Mazumder, MN Fireman, ECH Kyle, UK Mishra, JS Speck Semiconductor Science and Technology 30 (5), 055010, 2015 | 41 | 2015 |
RF performance of proton-irradiated AlGaN/GaN HEMTs J Chen, EX Zhang, CX Zhang, MW McCurdy, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 61 (6), 2959-2964, 2014 | 35 | 2014 |
Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN Z Zhang, E Farzana, WY Sun, J Chen, EX Zhang, DM Fleetwood, ... Journal of Applied Physics 118 (15), 2015 | 34 | 2015 |
High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs J Chen, YS Puzyrev, EX Zhang, DM Fleetwood, RD Schrimpf, AR Arehart, ... IEEE Transactions on Device and Materials Reliability 16 (3), 282-289, 2016 | 33 | 2016 |
Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures Z Zhang, D Cardwell, A Sasikumar, ECH Kyle, J Chen, EX Zhang, ... Journal of Applied Physics 119 (16), 2016 | 33 | 2016 |
Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors R Jiang, X Shen, J Chen, GX Duan, EX Zhang, DM Fleetwood, ... Applied Physics Letters 109 (2), 2016 | 29 | 2016 |
a. R. Arehart, and SA Ringel Z Zhang, D Cardwell, A Sasikumar, ECH Kyle, J Chen, EX Zhang, ... J. Appl. Phys 119, 165704, 2016 | 13 | 2016 |
High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy ECH Kyle, SW Kaun, F Wu, B Bonef, JS Speck Journal of Crystal Growth 454, 164-172, 2016 | 12 | 2016 |
Band gap bowing for high In content InAlN films RC Cramer, ECH Kyle, JS Speck Journal of Applied Physics 126 (3), 2019 | 10 | 2019 |
Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs R Jiang, EX Zhang, X Shen, J Chen, K Ni, P Wang, DM Fleetwood, ... 2016 16th European Conference on Radiation and Its Effects on Components and …, 2016 | 7 | 2016 |
Growth development of III-nitrides for electronic devices by molecular beam epitaxy ECH Kyle University of California, Santa Barbara, 2016 | 1 | 2016 |
Erratum to “High indium content homogenous InAlN layers grown by plasma assisted molecular beam epitaxy”[J. Cryst. Growth 454 (2016) 164–172] ECH Kyle, SW Kaun, F Wu, B Bonef, JS Speck Journal of Crystal Growth 496, 80, 2018 | | 2018 |