| Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2 J Linnros, N Lalic, A Galeckas, V Grivickas Journal of Applied Physics 86 (11), 6128-6134, 1999 | 446 | 1999 |
| Surface charge sensitivity of silicon nanowires: Size dependence N Elfström, R Juhasz, I Sychugov, T Engfeldt, AE Karlström, J Linnros Nano Letters 7 (9), 2608-2612, 2007 | 345 | 2007 |
| Photoluminescence spectroscopy of single silicon quantum dots J Valenta, R Juhasz, J Linnros Applied physics letters 80 (6), 1070-1072, 2002 | 247 | 2002 |
| Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias A Galeckas, J Linnros, P Pirouz Applied physics letters 81 (5), 883-885, 2002 | 242 | 2002 |
| Narrow luminescence linewidth of a silicon quantum dot I Sychugov, R Juhasz, J Valenta, J Linnros Physical Review Letters 94 (8), 087405, 2005 | 238 | 2005 |
| Silicon nanoribbons for electrical detection of biomolecules N Elfström, AE Karlström, J Linnros Nano letters 8 (3), 945-949, 2008 | 237 | 2008 |
| High quantum efficiency for a porous silicon light emitting diode under pulsed operation J Linnros, N Lalic Applied physics letters 66 (22), 3048-3050, 1995 | 189 | 1995 |
| Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire J Linnros, B Svensson, G Holmen Physical Review B 30 (7), 3629, 1984 | 184 | 1984 |
| Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide N Lalic, J Linnros Journal of LUMINESCENCE 80 (1-4), 263-267, 1998 | 175 | 1998 |
| Controlled fabrication of silicon nanowires by electron beam lithography and electrochemical size reduction R Juhasz, N Elfström, J Linnros Nano letters 5 (2), 275-280, 2005 | 172 | 2005 |
| Auger recombination in 4H-SiC: Unusual temperature behavior A Galeckas, J Linnros, V Grivickas, U Lindefelt, C Hallin Applied Physics Letters 71 (22), 3269-3271, 1997 | 172 | 1997 |
| Carrier lifetime measurements using free carrier absorption transients. I. Principle and injection dependence J Linnros Journal of Applied Physics 84 (1), 275-283, 1998 | 170 | 1998 |
| Luminescent transparent wood Y Li, S Yu, JGC Veinot, J Linnros, L Berglund, I Sychugov Advanced Optical Materials 5 (1), 2017 | 167 | 2017 |
| Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon J Linnros, RG Elliman, WL Brown Journal of Materials Research 3 (6), 1208-1211, 1988 | 167 | 1988 |
| Waveguiding effects in the measurement of optical gain in a layer of Si nanocrystals J Valenta, I Pelant, J Linnros Applied Physics Letters 81 (8), 1396-1398, 2002 | 163 | 2002 |
| Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition J Linnros, G Holmen, B Svensson Physical Review B 32 (5), 2770, 1985 | 159 | 1985 |
| Recombination-induced stacking faults: evidence for a general mechanism in hexagonal SiC A Galeckas, J Linnros, P Pirouz Physical review letters 96 (2), 025502, 2006 | 151 | 2006 |
| Near-unity internal quantum efficiency of luminescent silicon nanocrystals with ligand passivation F Sangghaleh, I Sychugov, Z Yang, JGC Veinot, J Linnros ACS nano 9 (7), 7097-7104, 2015 | 148 | 2015 |
| Electroluminescence of single silicon nanocrystals J Valenta, N Lalic, J Linnros Applied Physics Letters 84 (9), 1459-1461, 2004 | 92 | 2004 |
| Ultranarrow luminescence linewidth of silicon nanocrystals and influence of matrix I Sychugov, A Fucikova, F Pevere, Z Yang, JGC Veinot, J Linnros Acs Photonics 1 (10), 998-1005, 2014 | 85 | 2014 |
