Andrew Carter
Andrew Carter
Teledyne Scientific and Imaging
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Al2O3 growth on (100) In0. 53Ga0. 47As initiated by cyclic trimethylaluminum and hydrogen plasma exposures
AD Carter, WJ Mitchell, BJ Thibeault, JJM Law, MJW Rodwell
Applied physics express 4 (9), 091102, 2011
Influence of gate metallization processes on the electrical characteristics of high-k/ interfaces
GJ Burek, Y Hwang, AD Carter, V Chobpattana, JJM Law, WJ Mitchell, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas
K Shinohara, C King, AD Carter, EJ Regan, A Arias, J Bergman, ...
IEEE Electron Device Letters 39 (3), 417-420, 2018
THz bandwidth InP HBT technologies and heterogeneous integration with Si CMOS
M Urteaga, A Carter, Z Griffith, R Pierson, J Bergman, A Arias, P Rowell, ...
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 35-41, 2016
Record extrinsic transconductance (2.45 mS/µm at VDS= 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth
S Lee, CY Huang, AD Carter, DC Elias, JJM Law, V Chobpattana, ...
2013 Symposium on VLSI Technology, T246-T247, 2013
Reduction of leakage current in In0. 53Ga0. 47As channel metal-oxide-semiconductor field-effect-transistors using AlAs0. 56Sb0. 44 confinement layers
CY Huang, S Lee, D Cohen-Elias, JJM Law, AD Carter, V Chobpattana, ...
Applied Physics Letters 103 (20), 203502, 2013
III-V MOSFETs: scaling laws, scaling limits, fabrication processes
MJW Rodwell, U Singisetti, M Wistey, GJ Burek, A Carter, A Baraskar, ...
Indium Phosphide & Related Materials (IPRM), 2010 International Conference …, 2010
Co-doping of In x Ga 1− x As with silicon and tellurium for improved ultra-low contact resistance
JJM Law, AD Carter, S Lee, CY Huang, H Lu, MJW Rodwell, AC Gossard
Journal of Crystal Growth 378, 92-95, 2013
High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching
S Lee, CY Huang, AD Carter, JJM Law, DC Elias, V Chobpattana, ...
2013 International Conference on Indium Phosphide and Related Materials …, 2013
Do SEII Electrons Really Degrade SEM Image Quality?
GH Bernstein, AD Carter, DC Joy
Scanning: The Journal of Scanning Microscopies 35 (1), 1-6, 2013
Formation of sub-10 nm width InGaAs finFETs of 200 nm height by atomic layer epitaxy
D Cohen-Elias, JJM Law, HW Chiang, A Sivananthan, C Zhang, ...
71st Device Research Conference, 1-2, 2013
Wafer-scale InP/Si CMOS 3D Integration using low-temperature oxide bonding
A Carter, M Urteaga, P Rowell, S Hong, R Patti, C Petteway, G Fountain, ...
Compound Semiconductor Week, 2015
A 30 GSample/s InP/CMOS sample-hold amplifier with active droop correction
SK Kim, S Daneshgar, AD Carter, MJ Choe, M Urteaga, MJW Rodwell
2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016
GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers
K Shinohara, C King, EJ Regan, J Bergman, AD Carter, A Arias, ...
Substitutional-gate MOSFETs with composite (In0. 53Ga0. 47As/InAs/In0. 53Ga0. 47As) channels and self-aligned MBE source–drain regrowth
L Sanghoon, JJM Law, AD Carter, BJ Thibeault, W Mitchell, ...
IEEE Electron Device Lett 33 (11), 1553-1555, 2012
60 nm gate length Al2O3/ In0.53Ga0.47As gate-first MOSFETs using InAs raised source-drain regrowth
AD Carter, JJM Law, E Lobisser, GJ Burek, WJ Mitchell, BJ Thibeault, ...
69th Device Research Conference, 19-20, 2011
Si/InP Heterogeneous Integration Techniques from the Wafer-Scale (Hybrid Wafer Bonding) to the Discrete Transistor (Micro-Transfer Printing)
AD Carter, ME Urteaga, ZM Griffith, KJ Lee, J Roderick, P Rowell, ...
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2018
Q-band InP/CMOS receiver and transmitter beamformer channels fabricated by 3D heterogeneous integration
AD Carter, ME Urteaga, ZM Griffith, KJ Lee, J Roderick, P Rowell, ...
2017 IEEE MTT-S International Microwave Symposium (IMS), 1760-1763, 2017
Substitutional-gate MOSFETs with composite (In0. 53Ga0. 47As/InAs/In0. 53Ga0. 47As) channels and self-aligned MBE source–drain regrowth
S Lee, JJM Law, AD Carter, BJ Thibeault, W Mitchell, V Chobpattana, ...
IEEE Electron Device Letters 33 (11), 1553, 2012
Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls
DC Elias, A Sivananthan, C Zhang, S Keller, HW Chiang, JJM Law, ...
Japanese Journal of Applied Physics 53 (6), 065503, 2014
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