L Gerrer
L Gerrer
Device Modelling Group - University of Glasgow
Verified email at glasgow.ac.uk - Homepage
Title
Cited by
Cited by
Year
Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review
L Gerrer, J Ding, SM Amoroso, F Adamu-Lema, R Hussin, D Reid, C Millar, ...
Microelectronics Reliability 54 (4), 682-697, 2014
342014
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state
SM Amoroso, CM Compagnoni, A Ghetti, L Gerrer, AS Spinelli, AL Lacaita, ...
IEEE electron device letters 34 (5), 683-685, 2013
332013
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs
F Adamu-Lema, CM Compagnoni, SM Amoroso, N Castellani, L Gerrer, ...
IEEE transactions on electron devices 60 (2), 833-839, 2012
282012
3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET
L Gerrer, SM Amoroso, S Markov, F Adamu-Lema, A Asenov
IEEE transactions on electron devices 60 (12), 4008-4013, 2013
222013
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
SM Amoroso, L Gerrer, S Markov, F Adamu-Lema, A Asenov
Solid-state electronics 84, 120-126, 2013
202013
Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology
L Gerrer, SM Amoroso, P Asenov, J Ding, B Cheng, F Adamu-Lema, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 2.1-3A. 2.5, 2013
202013
Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging
M Duan, JF Zhang, Z Ji, WD Zhang, D Vigar, A Asenov, L Gerrer, ...
IEEE Transactions on Electron Devices 63 (9), 3642-3648, 2016
192016
Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D ‘atomistic’simulation
SM Amoroso, L Gerrer, S Markov, F Adamu-Lema, A Asenov
2012 Proceedings of the European Solid-State Device Research Conference …, 2012
182012
Accurate simulation of transistor-level variability for the purposes of TCAD-based device-technology cooptimization
L Gerrer, AR Brown, C Millar, R Hussin, SM Amoroso, B Cheng, D Reid, ...
IEEE Transactions on Electron Devices 62 (6), 1739-1745, 2015
152015
Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM
M Duan, JF Zhang, A Manut, Z Ji, W Zhang, A Asenov, L Gerrer, D Reid, ...
2015 IEEE International Electron Devices Meeting (IEDM), 20.4. 1-20.4. 4, 2015
142015
Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs
S Markov, SM Amoroso, L Gerrer, F Adamu-Lema, A Asenov
IEEE electron device letters 34 (5), 686-688, 2013
142013
Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale flash memories
SM Amoroso, L Gerrer, F Adamu-Lema, S Markov, A Asenov
2013 IEEE International Reliability Physics Symposium (IRPS), 3B. 4.1-3B. 4.6, 2013
112013
Inverse scaling trends for charge-trapping-induced degradation of FinFETs performance
SM Amoroso, VP Georgiev, L Gerrer, E Towie, X Wang, C Riddet, ...
IEEE Transactions on Electron Devices 61 (12), 4014-4018, 2014
102014
RTN distribution comparison for bulk, FDSOI and FinFETs devices
L Gerrer, SM Amoroso, R Hussin, A Asenov
Microelectronics Reliability 54 (9-10), 1749-1752, 2014
102014
Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs
L Gerrer, S Markov, SM Amoroso, F Adamu-Lema, A Asenov
Microelectronics Reliability 52 (9-10), 1918-1923, 2012
102012
3D TCAD statistical analysis of transient charging in BTI degradation of nanoscale MOSFETs
SM Amoroso, L Gerrer, A Asenov
2013 International Conference on Simulation of Semiconductor Processes and …, 2013
92013
Time domain simulation of statistical variability and oxide degradation including trapping/detrapping dynamics
S Markov, L Gerrer, F Adamu-Lema, S Amoroso, A Asenov
Proceedings International Conference on Simulation of Semiconductor Devices …, 2012
92012
Unified approach for simulation of statistical reliability in nanoscale CMOS transistors from devices to circuits
A Asenov, J Ding, D Reid, P Asenov, S Amoroso, F Adamu-Lema, ...
2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2449-2452, 2015
82015
Interplay between statistical variability and reliability in contemporary pMOSFETs: Measurements versus simulations
R Hussin, SM Amoroso, L Gerrer, B Kaczer, P Weckx, J Franco, ...
IEEE Transactions on Electron Devices 61 (9), 3265-3273, 2014
82014
3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices
SM Amoroso, F Adamu-Lema, S Markov, L Gerrer, A Asenov
2012 15th International Workshop on Computational Electronics, 1-4, 2012
82012
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Articles 1–20