| High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor I Chowdhury, MVS Chandrasekhar, PB Klein, JD Caldwell, T Sudarshan Journal of Crystal Growth 316 (1), 60-66, 2011 | 66 | 2011 |
| High purity semi-insulating 4H-SiC epitaxial layers by defect-competition epitaxy: controlling Si vacancies MVS Chandrashekhar, I Chowdhury, P Kaminski, R Kozlowski, PB Klein, ... Applied Physics Express 5 (2), 025502, 2012 | 26 | 2012 |
| Doping dependence of thermal oxidation on n-Type 4H-SiC BK Daas, MM Islam, IA Chowdhury, F Zhao, TS Sudarshan, ... IEEE transactions on electron devices 58 (1), 115-121, 2010 | 24 | 2010 |
| Step dynamics in the homoepitaxial growth of 6H-SiC by chemical vapor deposition on 1 offcut substrate using dichlorosilane as Si precursor SU Omar, MVS Chandrashekhar, IA Chowdhury, TA Rana, TS Sudarshan Journal of Applied Physics 113 (18), 2013 | 10 | 2013 |
| Graphene to graphane: Novel electrochemical conversion KM Daniels, B Daas, R Zhang, I Chowdhury, A Obe, J Weidner, ... arXiv preprint arXiv:1010.5458, 2010 | 6 | 2010 |
| Journey towards E-governance: A Bangladesh perspective IA Chowdhury, MS Islam, ZH Mahmood Proceedings of 7th International Conference on Computer and Information …, 2004 | 5 | 2004 |
| Step Controlled Epitaxy on 4 degree and 1 degree Off-Cut 4 H and 6 H-SiC Substrate Using Dichlorosilane S Omar, H Song, I Chowdhury, MVS Chandrashekhar, T Sudarshan Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011 | | 2011 |
| High growth rate and high purity semi-insulating epitaxy using dichlorosilane for power devices I Chowdhury University of South Carolina, 2010 | | 2010 |
| Recent Developments in SiC Homoepitaxy using Dichlorosilane for High Power Devices I Chowdhury, MVS Chandrasekhar, PB Klein, JD Caldwell, T Sudarshan MRS Online Proceedings Library (OPL) 1246, 1246-B04-06, 2010 | | 2010 |
| Solid-State Power and High Voltage Devices Simulation and Analysis of InGaAs Power MOSFET Performances and Reliability... JB Steighner, J.-S. Yuan, and Y. Liu 180 Materials … E Harvard, R Brown, JR Shealy, DX Liu, HC Chin, LS Tan, YC Yeo, ... | | |
Mvs ChandrashekharUniversity of South CarolinaVerified email at cec.sc.edu
