| GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells C Haller, JF Carlin, G Jacopin, W Liu, D Martin, R Butté, N Grandjean Applied Physics Letters 113 (11), 111106, 2018 | 115 | 2018 |
| Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence W Liu, JF Carlin, N Grandjean, B Deveaud, G Jacopin Applied Physics Letters 109 (4), 042101, 2016 | 56 | 2016 |
| Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells M Shahmohammadi, W Liu, G Rossbach, L Lahourcade, A Dussaigne, ... Physical Review B 95 (12), 125314, 2017 | 54 | 2017 |
| Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in -plane InGaN/GaN quantum wells W Liu, R Butté, A Dussaigne, N Grandjean, B Deveaud, G Jacopin Physical Review B 94 (19), 195411, 2016 | 53 | 2016 |
| Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence TFK Weatherley, W Liu, V Osokin, DTL Alexander, RA Taylor, JF Carlin, ... Nano Letters 21 (12), 5217-5224, 2021 | 32 | 2021 |
| All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity W Redjem, Y Zhiyenbayev, W Qarony, V Ivanov, C Papapanos, W Liu, ... Nature Communications 14 (1), 3321, 2023 | 30 | 2023 |
| Efficiency droop improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum wells LH Zhu, W Liu, FM Zeng, YL Gao, BL Liu, YJ Lu, Z Chen IEEE Photonics Journal 5 (2), 8200208-8200208, 2013 | 30 | 2013 |
| Spatially dependent carrier dynamics in single InGaN/GaN core-shell microrod by time-resolved cathodoluminescence W Liu, C Mounir, G Rossbach, T Schimpke, A Avramescu, HJ Lugauer, ... Applied Physics Letters 112 (5), 052106, 2018 | 23 | 2018 |
| Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime W Liu, C Haller, Y Chen, T Weatherley, JF Carlin, G Jacopin, R Butté, ... Applied Physics Letters 116 (22), 222106, 2020 | 20 | 2020 |
| GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface Y Chen, C Haller, W Liu, SY Karpov, JF Carlin, N Grandjean Applied Physics Letters 118 (11), 111102, 2021 | 19 | 2021 |
| Effect of localization on photoluminescence and zero-field splitting of silicon color centers V Ivanov, J Simoni, Y Lee, W Liu, K Jhuria, W Redjem, Y Zhiyenbayev, ... Physical Review B 106 (13), 134107, 2022 | 15 | 2022 |
| Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing Y Zhiyenbayev, W Redjem, V Ivanov, W Qarony, C Papapanos, J Simoni, ... Optics Express 31 (5), 8352-8362, 2023 | 14 | 2023 |
| Carrier localization and phonon-assisted hopping effects in semipolar InGaN/GaN light-emitting dioses grown by selective area epitaxy F Zeng, L Zhu, W Liu, X Li, W Liu, BJ Chen, YC Lee, ZC Feng, B Liu Journal of Alloys and Compounds 656, 881-886, 2016 | 10 | 2016 |
| Influence of GaN barrier thickness on optical properties of in-graded InGaN/GaN multiple quantum wells W Liu, LH Zhu, FM Zeng, L Zhang, WC Liu, XY Li, BL Liu, ZC Feng Applied Physics Express 6 (8), 081001, 2013 | 9 | 2013 |
| Exploration of Defect Dynamics and Color Center Qubit Synthesis with Pulsed Ion Beams T Schenkel, W Redjem, A Persaud, W Liu, PA Seidl, AJ Amsellem, ... Quantum Beam Science 6 (1), 13, 2022 | 7 | 2022 |
| Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shell microrods W Liu, G Rossbach, A Avramescu, T Schimpke, HJ Lugauer, M Strassburg, ... Physical Review B 100 (23), 235301, 2019 | 7 | 2019 |
| Improved Quantum Efficiency in Semipolar InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth L Zhu, F Zeng, W Liu, Z Feng, B Liu, Y Lu, Y Gao, Z Chen IEEE transactions on electron devices 60 (11), 3753-3759, 2013 | 7 | 2013 |
| Quantum Emitter Formation Dynamics and Probing of Radiation-Induced Atomic Disorder in Silicon W Liu, V Ivanov, K Jhuria, Q Ji, A Persaud, W Redjem, J Simoni, ... Physical Review Applied 20, 014058, 2023 | 5 | 2023 |
| Programmable quantum emitter formation in silicon K Jhuria, V Ivanov, D Polley, W Liu, A Persaud, Y Zhiyenbayev, W Redjem, ... arXiv preprint arXiv:2307.05759, 2023 | 2 | 2023 |
| Cryogenic optical transitions of T centers in bulk Silicon and Silicon-on-insulator for cavi ty quantum electrodynamics J Huang, MC Sarihan, JH Kang, B Liang, W Liu, CW Wong Frontiers in Optics, JTu7A. 2, 2021 | 2 | 2021 |
Nicolas GrandjeanInstitute of Physics, EPFLVerified email at epfl.ch
