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Amber McCreary
Amber McCreary
Postdoctoral Research Associate, National Institute of Standards and Technology
Verifierad e-postadress på nist.gov
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Measurement of the Neutron Radius of through Parity Violation in Electron Scattering
S Abrahamyan, Z Ahmed, H Albataineh, K Aniol, DS Armstrong, ...
Physical review letters 108 (11), 112502, 2012
7292012
2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications
Z Lin, A McCreary, N Briggs, S Subramanian, K Zhang, Y Sun, X Li, ...
2D Materials 3 (4), 042001, 2016
5172016
Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer tungsten disulfide
V Carozo, Y Wang, K Fujisawa, BR Carvalho, A McCreary, S Feng, Z Lin, ...
Science advances 3 (4), e1602813, 2017
2642017
CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage
N Perea-López, Z Lin, NR Pradhan, A Iñiguez-Rábago, AL Elías, ...
2D Materials 1 (1), 011004, 2014
2342014
Ultrasensitive gas detection of large-area boron-doped graphene
R Lv, G Chen, Q Li, A McCreary, A Botello-Méndez, SV Morozov, L Liang, ...
Proceedings of the National Academy of Sciences 112 (47), 14527-14532, 2015
1982015
Metal to Insulator Quantum-Phase Transition in Few-Layered ReS2
NR Pradhan, A McCreary, D Rhodes, Z Lu, S Feng, E Manousakis, ...
Nano letters 15 (12), 8377-8384, 2015
1332015
Distinct photoluminescence and Raman spectroscopy signatures for identifying highly crystalline WS2 monolayers produced by different growth methods
A McCreary, A Berkdemir, J Wang, MA Nguyen, AL Elías, N Perea-López, ...
Journal of Materials Research 31 (7), 931-944, 2016
1162016
Effects of Uniaxial and Biaxial Strain on Few-Layered Terrace Structures of MoS2 Grown by Vapor Transport
A McCreary, R Ghosh, M Amani, J Wang, KAN Duerloo, A Sharma, ...
ACS nano 10 (3), 3186-3197, 2016
1072016
Heteroatom doping of two-dimensional materials: From graphene to chalcogenides
H Zhu, X Gan, A McCreary, R Lv, Z Lin, M Terrones
Nano Today 30, 100829, 2020
972020
Intricate Resonant Raman Response in Anisotropic ReS2
A McCreary, JR Simpson, Y Wang, D Rhodes, K Fujisawa, L Balicas, ...
Nano letters 17 (10), 5897-5907, 2017
902017
Distinct magneto-Raman signatures of spin-flip phase transitions in CrI3
A McCreary, TT Mai, FG Utermohlen, JR Simpson, KF Garrity, X Feng, ...
Nature communications 11 (1), 3879, 2020
732020
Quasi-two-dimensional magnon identification in antiferromagnetic via magneto-Raman spectroscopy
A McCreary, JR Simpson, TT Mai, RD McMichael, JE Douglas, N Butch, ...
Physical Review B 101 (6), 064416, 2020
692020
New measurements of the transverse beam asymmetry for elastic electron scattering from selected nuclei
S Abrahamyan, A Acha, A Afanasev, Z Ahmed, H Albataineh, K Aniol, ...
Physical review letters 109 (19), 192501, 2012
602012
The Qweak experimental apparatus
T Allison, M Anderson, D Androić, DS Armstrong, A Asaturyan, T Averett, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2015
542015
Magnon-phonon hybridization in 2D antiferromagnet MnPSe3
TT Mai, KF Garrity, A McCreary, J Argo, JR Simpson, V Doan-Nguyen, ...
Science advances 7 (44), eabj3106, 2021
492021
Precision electron-beam polarimetry at 1 GeV using diamond microstrip detectors
A Narayan, D Jones, JC Cornejo, MM Dalton, W Deconinck, D Dutta, ...
Physical Review X 6 (1), 011013, 2016
482016
An outlook into the flat land of 2D materials beyond graphene: synthesis, properties and device applications
A McCreary, O Kazakova, D Jariwala, ZY Al Balushi
2D Materials 8 (1), 013001, 2020
382020
Opportunities in electrically tunable 2D materials beyond graphene: Recent progress and future outlook
T Vincent, J Liang, S Singh, EG Castanon, X Zhang, A McCreary, ...
Applied Physics Reviews 8 (4), 2021
352021
Polarization-resolved Raman spectroscopy of and evidence of room-temperature two-dimensional magnetic scattering
TT Mai, A McCreary, P Lampen-Kelley, N Butch, JR Simpson, JQ Yan, ...
Physical Review B 100 (13), 134419, 2019
292019
Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
NR Pradhan, C Garcia, B Isenberg, D Rhodes, S Feng, S Memaran, Y Xin, ...
Scientific reports 8 (1), 12745, 2018
272018
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