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Harry Liu
Harry Liu
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Verifierad e-postadress på rice.edu
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Patient support program increased medication adherence with lower total health care costs despite increased drug spending
D Brixner, DT Rubin, P Mease, M Mittal, H Liu, M Davis, A Ganguli, ...
Journal of managed care & specialty pharmacy 25 (7), 770-779, 2019
462019
MRAM architecture using offset bits for increased write selectivity
S Li, T Zhu, AS Arrott, H Liu, WL Larson, Y Lu
US Patent 6,424,561, 2002
432002
Passivated magneto-resistive bit structure and passivation method therefor
H Liu, L Berg, WL Larson, S Li, T Zhu, J Drewes
US Patent 6,392,922, 2002
332002
Passivated magneto-resistive bit structure
H Liu, L Berg, WL Larson, S Li, T Zhu, J Drewes
US Patent 6,806,546, 2004
302004
A charge-control SPICE engineering model for the parasitic bipolar transistor action in SOI CMOS single-event upsets
DE Fulkerson, H Liu
IEEE Transactions on Nuclear Science 51 (1), 275-287, 2004
242004
Limiting upset cross sections of SEU hardened SOI SRAMs
MS Liu, HY Liu, N Brewster, D Nelson, KW Golke, G Kirchner, HL Hughes, ...
IEEE transactions on nuclear science 53 (6), 3487-3493, 2006
212006
Radiation-hardened SRAM cell with write error protection
H Liu
US Patent 7,233,518, 2007
202007
Proton-induced upset in SOI CMOS SRAMS
ST Liu, HY Liu, D Anthony, W Heikkila, H Hughes, A Campbell, ...
IEEE transactions on nuclear science 51 (6), 3475-3479, 2004
202004
Pseudo-spin-valve device performance for giant magnetoresistive random access memory applications
RR Katti, A Arrott, J Drewes, W Larson, H Liu, Y Lu, T Vogt, T Zhu
IEEE transactions on magnetics 37 (4), 1967-1969, 2001
162001
Radiation-hardened memory element with multiple delay elements
D Nelson, K Golke, HHL Liu, M Liu
US Patent 8,767,444, 2014
142014
Proton induced single event upset in 6 T SOI SRAMs
HY Liu, MS Liu, HL Hughes
IEEE transactions on nuclear science 53 (6), 3502-3505, 2006
132006
Proton induced single event upset in a 4M SOI SRAM
HY Liu, ST Liu, KW Golke, DK Nelson, WW Heikkila, WC Jenkins
2003 IEEE International Conference on SOI, 26-27, 2003
132003
Proton and heavy ion SEU resistant SRAM
M Liu, H Liu
US Patent 7,200,031, 2007
102007
Magneto-resistive bit structure and method of manufacture therefor
H Liu, W Larson, L Berg, T Zhu, S Li, RR Katti, Y Lu, A Arrott
US Patent 6,717,194, 2004
102004
Passivated magneto-resistive bit structure and passivation method therefor
H Liu, L Berg, WL Larson, S Li, T Zhu, J Drewes
US Patent 6,623,987, 2003
102003
MRAM architectures for increased write selectivity
S Li, T Zhu, AS Arrott, H Liu, WL Larson, Y Lu
US Patent 6,522,574, 2003
102003
The effect of active delay element resistance on limiting heavy ion SEU upset cross-sections of SOI ADE/SRAMs
ST Liu, DK Nelson, JC Tsang, K Golke, P Fechner, W Heikkila, N Brewster, ...
IEEE Transactions on Nuclear Science 54 (6), 2480-2487, 2007
92007
System and method for hardening MRAM bits
OJ Hynes, R Katti, HHL Liu, MS Liu
US Patent 7,286,393, 2007
92007
A new dose rate model for SOI MOSFETs and its implementation in SPICE
HY Liu, KW Golke, ST Liu
2005 IEEE International SOI Conference Proceedings, 112-113, 2005
92005
Paper FD-04 presented at the 8th Joint MMM-Intermag Conference
R Katti, A Arrot, J Drewes, W Larson, H Liu, Y Lu, T Vogt, T Zhu
San Antonio, TX 7, 2001
82001
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Artiklar 1–20