Xingsheng Wang
TitleCited byYear
Statistical variability and reliability in nanoscale FinFETs
X Wang, AR Brown, B Cheng, A Asenov
Electron Devices Meeting (IEDM), 2011 IEEE International, 5.4. 1-5.4. 4, 2011
2332011
Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: A full-scale 3-D simulation scaling study
X Wang, AR Brown, N Idris, S Markov, G Roy, A Asenov
Electron Devices, IEEE Transactions on 58 (8), 2293-2301, 2011
1272011
Simulation Study of Dominant Statistical Variability Sources in 32-nm High-k/Metal Gate CMOS
X Wang, G Roy, O Saxod, A Bajolet, A Juge, A Asenov
Electron Device Letters, IEEE 33 (5), 643-645, 2012
62*2012
Statistical-variability compact-modeling strategies for BSIM4 and PSP
B Cheng, D Dideban, N Moezi, C Millar, G Roy, X Wang, S Roy, A Asenov
Design & Test of Computers, IEEE 27 (2), 26-35, 2010
622010
Interplay between process-induced and statistical variability in 14-nm CMOS technology double-gate SOI FinFETs
X Wang, B Cheng, AR Brown, C Millar, JB Kuang, S Nassif, A Asenov
IEEE Transactions on Electron Devices 60 (8), 2485-2492, 2013
472013
Advanced simulation of statistical variability and reliability in nano CMOS transistors
A Asenov, S Roy, RA Brown, G Roy, C Alexander, C Riddet, C Millar, ...
Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-1, 2008
402008
Variability Aware Simulation Based Design-Technology Cooptimization (DTCO) Flow in 14 nm FinFET/SRAM Cooptimization
A Asenov, B Cheng, X Wang, AR Brown, C Millar, C Alexander, ...
IEEE Transactions on Electron Devices 62 (6), 1682 - 1690, 2015
342015
Geometry, temperature, and body bias dependence of statistical variability in 20-nm bulk CMOS technology: A comprehensive simulation analysis
X Wang, F Adamu-Lema, B Cheng, A Asenov
Electron Devices, IEEE Transactions on 60 (5), 1547-1554, 2013
302013
RTS Amplitude Distribution in 20nm SOI FinFETs Subject to Statistical Variability
X Wang, AR Brown, B Cheng, A Asenov
Simulation of Semiconductor Processes and Devices (SISPAD), 2012 Proceedings …, 2012
282012
Nanowire transistor solutions for 5nm and beyond
A Asenov, Y Wang, B Cheng, X Wang, P Asenov, T Al-Ameri, VP Georgiev
2016 17th International Symposium on Quality Electronic Design (ISQED), 269-274, 2016
202016
Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability
A Asenov, B Cheng, X Wang, AR Brown, D Reid, C Millar, C Alexander
IEDM, 818-821, 2013
202013
Domains of Dirichlet forms and effective resistance estimates on pcf fractals
J Hu, X Wang
Studia Math 177 (2), 153-172, 2006
202006
Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors
Y Wang, T Al-Ameri, X Wang, VP Georgiev, E Towie, SM Amoroso, ...
IEEE Transactions on Electron Devices 62 (10), 3229-3236, 2015
192015
Predictive Compact Modeling of Random Variations in FinFET Technology for 16/14nm Node and Beyond
X Jiang, X Wang, R Wang, B Cheng, A Asenov, R Huang
Electron Devices Meeting (IEDM), 2015 IEEE International, 28.3.1-28.3.4, 2015
182015
Impact of strain on the performance of high-k/metal replacement gate MOSFETs
X Wang, S Roy, A Asenov
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International …, 2009
182009
Problems With the Continuous Doping TCAD Simulations of Decananometer CMOS Transistors
A Asenov, F Adamu-Lema, X Wang, SM Amoroso
IEEE Transactions on Electron Devices 61 (8), 2745-2751, 2014
172014
Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm node SOI finFET Technology
X Wang, B Cheng, AR Brown, C Millar, JB Kuang, S Nassif, A Asenov
IEEE Design & Test 30 (6), 18-28, 2013
162013
Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design
X Wang, B Cheng, AR Brown, C Millar, A Asenov
2012 Proceedings of the European Solid-State Device Research Conference …, 2012
162012
A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology
X Jiang, S Guo, R Wang, X Wang, B Cheng, A Asenov, R Huang
IEEE Electron Device Letters 37 (8), 962-965, 2016
142016
FinFET Centric Variability-Aware Compact Model Extraction and Generation Technology Supporting DTCO
X Wang, B Cheng, D Reid, A Pender, P Asenov, C Millar, A Asenov
IEEE Transactions on Electron Devices 62 (10), 3139-3146, 2015
132015
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