| Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs S Dasgupta, A Rajashekhar, K Majumdar, N Agrawal, A Razavieh, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 142 | 2015 |
| Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same F Zhou, RS Makala, A Rajashekhar, R Sharangpani US Patent 10,665,581, 2020 | 44 | 2020 |
| Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof R Sharangpani, F Amano, RS Makala, A Rajashekhar, F Zhou US Patent 10,276,583, 2019 | 44 | 2019 |
| Three-dimensional memory device with annular blocking dielectrics and method of making thereof F Zhou, RS Makala, R Sharangpani, A Rajashekhar US Patent 10,283,513, 2019 | 43 | 2019 |
| Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same R Sharangpani, RS Makala, F Zhou, A Rajashekhar, SK Kanakamedala, ... US Patent 10,529,620, 2020 | 40 | 2020 |
| Ferroelectric/Ferroelastic domain wall motion in dense and porous tetragonal lead zirconate titanate films RL Johnson-Wilke, RHT Wilke, M Wallace, A Rajashekhar, G Esteves, ... IEEE transactions on ultrasonics, ferroelectrics, and frequency control 62 …, 2015 | 34 | 2015 |
| Three-dimensional memory device containing air gap rails and method of making thereof F Zhou, RS Makala, R Sharangpani, A Rajashekhar US Patent 10,290,648, 2019 | 24 | 2019 |
| Thermal atomic layer etching of amorphous and crystalline Al2O3 films JA Murdzek, A Rajashekhar, RS Makala, SM George Journal of Vacuum Science & Technology A 39 (4), 2021 | 23 | 2021 |
| Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same T Hinoue, OBU Tomoyuki, T Uno, Y Mukae, R Sharangpani, RS Makala, ... US Patent 10,615,123, 2020 | 22 | 2020 |
| In situ laser annealing during growth of Pb (Zr0. 52Ti0. 48) O3 thin films A Rajashekhar, A Fox, SSN Bharadwaja, S Trolier-McKinstry Applied Physics Letters 103 (3), 2013 | 21 | 2013 |
| Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same F Zhou, RS Makala, CJ Petti, R Sharangpani, A Rajashekhar, SY Yang US Patent 10,381,559, 2019 | 18 | 2019 |
| Microstructure Evolution of In Situ Pulsed‐Laser Crystallized Pb(Zr0.52Ti0.48)O3 Thin Films A Rajashekhar, HR Zhang, B Srowthi, IM Reaney, S Trolier‐McKinstry Journal of the American Ceramic Society 99 (1), 43-50, 2016 | 16 | 2016 |
| Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same A Rajashekhar, RS Makala, F Zhou, R Sharangpani US Patent 10,790,300, 2020 | 14 | 2020 |
| Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making same R Sharangpani, F Zhou, RS Makala, A Rajashekhar US Patent 10,651,196, 2020 | 14 | 2020 |
| Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same F Zhou, RS Makala, CJ Petti, R Sharangpani, A Rajashekhar, SY Yang US Patent 10,381,409, 2019 | 14 | 2019 |
| Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same R Sharangpani, RS Makala, A Rajashekhar, F Zhou, S Ranganathan, ... US Patent 10,797,060, 2020 | 12 | 2020 |
| Three-dimensional nor array including vertical word lines and discrete channels and methods of making the same A Rajashekhar, F Zhou, RS Makala, Y Zhang, R Sharangpani US Patent 11,114,534, 2021 | 11 | 2021 |
| Three-dimensional memory device including replacement crystalline channels and methods of making the same F Zhou, A Rajashekhar, R Sharangpani, RS Makala US Patent 10,868,025, 2020 | 11 | 2020 |
| Three-dimensional nor array including vertical word lines and discrete memory elements and methods of manufacture A Rajashekhar, RS Makala, R Sharangpani US Patent App. 17/237,447, 2021 | 10 | 2021 |
| Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same A Nishida, T Iizuka, R Sharangpani, RS Makala, A Rajashekhar, F Zhou, ... US Patent 10,797,061, 2020 | 10 | 2020 |
Raghuveer MakalaNC State, Rensselaer Polytechnic Institute, Novellus, SanDisk/WDC, Applied MaterialsVerifierad e-postadress på amat.com
