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Robert Czernecki
Robert Czernecki
Institue of High Pressure Physics PAS
Verifierad e-postadress på unipress.waw.pl
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Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals
L Marona, P Wisniewski, P Prystawko, I Grzegory, T Suski, S Porowski, ...
Applied physics letters 88 (20), 2006
992006
Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes
S Grzanka, G Franssen, G Targowski, K Krowicki, T Suski, R Czernecki, ...
Applied Physics Letters 90 (10), 2007
702007
A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN
P Kamyczek, E Placzek-Popko, V Kolkovsky, S Grzanka, R Czernecki
Journal of Applied Physics 111 (11), 2012
652012
Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy
M Leszczynski, R Czernecki, S Krukowski, M Krysko, G Targowski, ...
Journal of crystal growth 318 (1), 496-499, 2011
572011
Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates
M Kryśko, G Franssen, T Suski, M Albrecht, B Łucznik, I Grzegory, ...
Applied Physics Letters 91 (21), 2007
542007
Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance
J Pereiro, C Rivera, Á Navarro, E Muñoz, R Czernecki, S Grzanka, ...
IEEE journal of quantum electronics 45 (6), 617-622, 2009
532009
Elimination of trench defects and V-pits from InGaN/GaN structures
J Smalc-Koziorowska, E Grzanka, R Czernecki, D Schiavon, ...
Applied Physics Letters 106 (10), 2015
522015
Influence of GaN substrate off‐cut on properties of InGaN and AlGaN layers
M Sarzynski, M Leszczynski, M Krysko, JZ Domagala, R Czernecki, ...
Crystal Research and Technology 47 (3), 321-328, 2012
482012
Cavity suppression in nitride based superluminescent diodes
A Kafar, S Stańczyk, S Grzanka, R Czernecki, M Leszczyński, T Suski, ...
Journal of Applied Physics 111 (8), 2012
452012
InGaN laser diode mini-arrays
P Perlin, L Marona, K Holc, P Wisniewski, T Suski, M Leszczynski, ...
Applied physics express 4 (6), 062103, 2011
452011
Graded-index separate confinement heterostructure InGaN laser diodes
S Stańczyk, T Czyszanowski, A Kafar, J Goss, S Grzanka, E Grzanka, ...
Applied Physics Letters 103 (26), 2013
442013
Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy
T Suski, E Litwin-Staszewska, R Piotrzkowski, R Czernecki, M Krysko, ...
Applied Physics Letters 93 (17), 2008
432008
Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes
P Perlin, K Holc, M Sarzyński, W Scheibenzuber, Ł Marona, R Czernecki, ...
Applied Physics Letters 95 (26), 2009
412009
Anomalous temperature characteristics of single wide quantum well InGaN laser diode
T Świetlik, G Franssen, P Wiśniewski, S Krukowski, SP Łepkowski, ...
Applied physics letters 88 (7), 2006
382006
Search for free holes in InN: Mg-interplay between surface layer and Mg-acceptor doped interior
LH Dmowski, M Baj, T Suski, J Przybytek, R Czernecki, X Wang, ...
Journal of Applied Physics 105 (12), 2009
362009
Elimination of AlGaN epilayer cracking by spatially patterned AlN mask
M Sarzyński, M Kryśko, G Targowski, R Czernecki, A Sarzyńska, A Libura, ...
Applied physics letters 88 (12), 2006
352006
Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN∕ GaN multiple quantum wells on bulk GaN substrates
G Franssen, S Grzanka, R Czernecki, T Suski, L Marona, T Riemann, ...
Journal of applied physics 97 (10), 2005
342005
Control of Mg doping of GaN in RF-plasma molecular beam epitaxy
A Feduniewicz, C Skierbiszewski, M Siekacz, ZR Wasilewski, I Sproule, ...
Journal of crystal growth 278 (1-4), 443-448, 2005
342005
Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors
I Gorczyca, A Kamińska, G Staszczak, R Czernecki, SP Łepkowski, ...
Physical Review B 81 (23), 235206, 2010
332010
Hydrogen diffusion in GaN: Mg and GaN: Si
R Czernecki, E Grzanka, R Jakiela, S Grzanka, C Skierbiszewski, H Turski, ...
Journal of Alloys and Compounds 747, 354-358, 2018
302018
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