| High-modulation-efficiency, integrated waveguide modulator–laser diode at 448 nm C Shen, TK Ng, JT Leonard, A Pourhashemi, HM Oubei, MS Alias, ... ACS Photonics 3 (2), 262-268, 2016 | 87 | 2016 |
| High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications C Shen, TK Ng, JT Leonard, A Pourhashemi, S Nakamura, SP DenBaars, ... Optics Letters 41 (11), 2608-2611, 2016 | 67 | 2016 |
| High-power blue laser diodes with indium tin oxide cladding on semipolar (202 1) GaN substrates A Pourhashemi, RM Farrell, DA Cohen, JS Speck, SP DenBaars, ... Applied Physics Letters 106 (11), 2015 | 66 | 2015 |
| Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202 1) GaN substrates A Pourhashemi, RM Farrell, MT Hardy, PS Hsu, KM Kelchner, JS Speck, ... Applied Physics Letters 103 (15), 2013 | 51 | 2013 |
| Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202 1) III-nitride laser diodes with chemically assisted ion beam etched … DL Becerra, LY Kuritzky, J Nedy, A Saud Abbas, A Pourhashemi, ... Applied Physics Letters 108 (9), 2016 | 28 | 2016 |
| Optimization of NDE characterization parameters for a RF-SQUID based system using FEM analysis M Fardmanesh, F Sarreshtedari, A Pourhashemi, E Ansari, MA Vesaghi, ... IEEE Transactions on applied Superconductivity 19 (3), 791-795, 2009 | 24 | 2009 |
| Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture L Megalini, DL Becerra, RM Farrell, A Pourhashemi, JS Speck, ... Applied Physics Express 8 (4), 042701, 2015 | 17 | 2015 |
| CW operation of high‐power blue laser diodes with polished facets on semi‐polar GaN substrates A Pourhashemi, RM Farrell, DA Cohen, DL Becerra, SP DenBaars, ... Electronics Letters 52 (24), 2003-2005, 2016 | 8 | 2016 |
| 2D Analysis of the Effects of Geometry on the Response of High- Superconductive Bolometric Detectors M Fardmanesh, A Kokabi, A Pourhashemi, A Moftakharzadeh, ... IEEE transactions on applied superconductivity 19 (3), 484-488, 2009 | 6 | 2009 |
| An efficient finite-element approach for the modeling of planar double-D excitation coils and flaws in SQUID NDE systems F Sarreshtedari, A Pourhashemi, N Asad, J Schubert, M Banzet, ... IEEE transactions on applied superconductivity 20 (2), 76-81, 2010 | 5 | 2010 |
| High power blue-violet III-nitride semipolar laser diodes A Pourhashemi, RM Farrell, SP DenBaars, JS Speck, S Nakamura US Patent 9,356,431, 2016 | 3 | 2016 |
| Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate C Shen, J Leonard, A Pourhashemi, H Oubei, MS Alias, TK Ng, ... 2015 IEEE Photonics Conference (IPC), 581-582, 2015 | 3 | 2015 |
| FEM enhanced signal processing approach for pattern recognition in the SQUID based NDE system F Sarreshtedari, NMS Jahed, N Hosseni, A Pourhashemi, M Fardmanesh Journal of Physics: Conference Series 234 (4), 042030, 2010 | 2 | 2010 |
| Measurement of internal loss, injection efficiency, and gain for continuous-wave semipolar (202̄1̄) III-nitride laser diodes D Becerra, L Kuritzky, J Nedy, A Abbas, A Pourhashemi, R Farrell, ... 2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016 | | 2016 |
| Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 (2) over-bar (1) over-bar III-nitride laser diodes with chemically … DL Becerra, LY Kuritzky, J Nedy, AS Abbas, A Pourhashemi, RM Farrell, ... APPLIED PHYSICS LETTERS 108 (9), 2016 | | 2016 |
| Implementation of a SQUID-Based NDE System for Detection of Hidden Cracks and Comparison with an Efficient Proposed FEM Algorithm F Sarreshtedari, A Pourhashemi, Y Khatami, M Alavi, M Vesaghi, ... | | |
