Matthias Bucher

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Christian EnzEcole Polytechnique Fédérale de Lausanne (EPFL)Verified email at epfl.ch
Jean-Michel SalleseSenior scientist - Ecole polytechnique Federale de LausanneVerified email at epfl.ch
Christophe LALLEMENTProfessor, ICube Laboratory, University of Strasbourg / CNRSVerified email at unistra.fr
Nikolaos MakrisTechnical University of Crete, IESL-FORTHVerified email at electronics.tuc.gr
Antonios BazigosEngineer at ams AGVerified email at ams.com
Wladyslaw GrabinskiGMC Suisse, MOS-AK, EPFL, ETHZ, ITE (IMiF)Verified email at grabinski.ch
nikos mavredakisAutonomous University BarcelonaVerified email at uab.es
Rupendra Kumar SharmaAssistant Professor, Czech Technical University in PragueVerified email at fel.cvut.cz
Angelos AntonopoulosPostdoctoral Research Associate, University of Texas at DallasVerified email at utdallas.edu
Dimitrios TassisAristotle University of ThessalonikiVerified email at auth.gr
Chevas LoukasPh.D. student, Technical University of CreteVerified email at isc.tuc.gr
Farzan JazaeriResearch Scientist, EPFLVerified email at epfl.ch
Gerard GhibaudoIMEP-LAHC, Minatec-INP GrenobleVerified email at minatec.inpg.fr
Babis DimitriadisDepartment of Physics Aristotle University of Thessaloniki, 54124, GreeceVerified email at physics.auth.gr
ANDREAS TSORMPATZOGLOUDepartment of Informatics and Telecommunications, University of Ioannina, Arta, GreeceVerified email at uoi.gr
Alexia PapadopoulouResearch Assistant, IESL FORTHVerified email at iesl.forth.gr
Alain-Serge PorretCSEM S.A.Verified email at porret.net
Sadayuki YoshitomiMecaghips CorporationVerified email at megachips.co.jp
Michael SchröterProfessor of Electronic Devices and Integrated CircuitsVerified email at tu-dresden.de
Dimitris KazazisPaul Scherrer InstitutVerified email at psi.ch

Matthias Bucher

School of Electrical & Computer Engineering, Technical University of Crete (TUC), Chania, Greece

Verified email at electronics.tuc.gr

low power analog integrated circuit design compact modeling noise variability


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The EPFL-EKV MOSFET Model Equations for Simulation, Model Version 2.6 M Bucher, C Lallement, C Enz, F Théodoloz, F Krummenacher Technical Report, Eletronics Laboratories (LEG), Swiss Federal Institute of …, 1996	225*	1996
An efficient parameter extraction methodology for the EKV MOST model M Bucher, C Lallement, CC Enz Proceedings of International Conference on Microelectronic Test Structures …, 1996	131	1996
Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model JM Sallese, M Bucher, F Krummenacher, P Fazan Solid-State Electronics 47 (4), 677-683, 2003	130	2003
An adjusted constant-current method to determine saturated and linear mode threshold voltage of MOSFETs A Bazigos, M Bucher, J Assenmacher, S Decker, W Grabinski, ... IEEE Transactions on Electron Devices 58 (11), 3751-3758, 2011	75	2011
Design-oriented characterization of CMOS over the continuum of inversion level and channel length DM Binkley, M Bucher, D Foty ICECS 2000. 7th IEEE International Conference on Electronics, Circuits and …, 2000	70	2000
Comparison of a BSIM3V3 and EKV MOSFET model for a 0.5/spl mu/m CMOS process and implications for analog circuit design SC Terry, JM Rochelle, DM Binkley, BJ Blalock, DP Foty, M Bucher IEEE transactions on nuclear science 50 (4), 915-920, 2003	67	2003
Compact model of drain current in short-channel triple-gate FinFETs N Fasarakis, A Tsormpatzoglou, DH Tassis, I Pappas, K Papathanasiou, ... IEEE transactions on electron devices 59 (7), 1891-1898, 2012	65	2012
Accurate MOS modelling for analog circuit simulation using the EKV model M Bucher, C Lallement, C Enz, F Krummenacher 1996 IEEE International Symposium on Circuits and Systems. Circuits and …, 1996	58	1996
Device design engineering for optimum analog/RF performance of nanoscale DG MOSFETs RK Sharma, M Bucher IEEE Transactions on Nanotechnology 11 (5), 992-998, 2012	55	2012
Improved analytical modeling of polysilicon depletion in MOSFETs for circuit simulation JM Sallese, M Bucher, C Lallement Solid-State Electronics 44 (6), 905-912, 2000	52	2000
Analytical MOS transistor modelling for analog circuit simulation M Bucher Verlag nicht ermittelbar, 2000	48	2000
Estimating key parameters in the EKV MOST model for analogue design and simulation GAS Machado, CC Enz, M Bucher Proceedings of ISCAS'95-International Symposium on Circuits and Systems 3 …, 1995	47	1995
CMOS small-signal and thermal noise modeling at high frequencies A Antonopoulos, M Bucher, K Papathanasiou, N Mavredakis, N Makris, ... IEEE transactions on electron devices 60 (11), 3726-3733, 2013	46	2013
The EKV 3.0 compact MOS transistor model: accounting for deep-submicron aspects M Bucher, C Enz, F Krummenacher, JM Sallese, C Lallement, AS Porret Proc. MSM Int. Conf., Nanotech 2002, 670-673, 2002	45	2002
Compact modeling of nanoscale trapezoidal FinFETs N Fasarakis, TA Karatsori, A Tsormpatzoglou, DH Tassis, ... IEEE Transactions on Electron Devices 61 (2), 324-332, 2013	44	2013
Modelling and characterization of non-uniform substrate doping C Lallement, M Bucher, C Enz Solid-State Electronics 41 (12), 1857-1861, 1997	42	1997
A physics-based analytical compact model for the drift region of the HV-MOSFET A Bazigos, F Krummenacher, JM Sallese, M Bucher, E Seebacher, ... IEEE transactions on electron devices 58 (6), 1710-1721, 2011	39	2011
Analysis of transconductances at all levels of inversion in deep submicron CMOS M Bucher, D Kazazis, F Krummenacher, D Binkley, D Foty, Y Papananos 9th International Conference on Electronics, Circuits and Systems 3, 1183-1186, 2002	39	2002
Scalable Gm/I based MOSFET model M Bucher, C Lallement, C Enz, F Théodoloz, F Krummenacher Int. Semicond. Dev. Research Symp.(ISDRS’97), 615-618, 1997	39	1997
Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model C Lallement, JM Sallese, M Bucher, W Grabinski, PC Fazan IEEE Transactions on Electron Devices 50 (2), 406-417, 2003	35	2003

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